人工晶体学报2024，Vol.53Issue(1)：25-37,13.
GaAsBi半导体材料的制备及应用研究进展
Research Progress on the Preparation and Application of GaAsBi Semiconductor Materials
摘要
Abstract
Rare bismuth Ⅲ-Ⅴ semiconductor materials have broad prospects in the field of electronic and optoelectronic devices.The preparation methods mainly include molecular beam epitaxy(MBE)and metal-organic vapor phase epitaxy(MOVPE).This article focuses on GaAsxBi1-x semiconductor materials which show physical characteristics of large bandgap reduction,temperature insensitivity,strong spin-orbit splitting,and provides a review of their preparation methods and research progress.Researches on GaAsBi materials are mainly on the preparation of thin films,multiple quantum wells,nanowires,and quantum dots materials.In the aspect of thin films materials,the emphasis is on studying the influence of preparation process conditions on GaAsBi thin films,such as low substrate temperature,low growth rate,and unconventional Ⅴ/Ⅲ flux ratios;for multiple quantum wells materials,the use of dual substrate temperature techniques can effectively reduce Bi segregation;for nanowires and quantum dots materials,metallic Bi,as a surface-active agent,can improve the morphology and optical properties of the materials.However,there are still challenges in the research and application of this material,such as the degradation of crystalline quality in thin films materials,the problem of metallic Bi agglomeration,and controversies regarding the uniformity and formation mechanism of Bi in quantum dots materials.Addressing these issues is of great significance for improving the quality of GaAsxBi1-x semiconductor materials and promoting device development.关键词
稀铋Ⅲ-Ⅴ半导体材料/GaAsBi薄膜/多量子阱材料/量子点材料/MBE/MOVPEKey words
dilute bismuth Ⅲ-Ⅴ semiconductor material/GaAsBi thin film/quantum well material/quantum dot material/MBE/MOVPE分类
信息技术与安全科学引用本文复制引用
马玉麟,郭祥,丁召..GaAsBi半导体材料的制备及应用研究进展[J].人工晶体学报,2024,53(1):25-37,13.基金项目
国家自然科学基金(61564002) （61564002）
贵州省科学技术基金(黔科合基础[2020]1Y271,[2017]1055) （黔科合基础[2020]1Y271,[2017]1055）
半导体功率器件可靠性教育部研究中心开放基金(ERCME-KFJJ2019-(07)) （ERCME-KFJJ2019-(07）
贵州大学培育项目(贵大培育[2019]58号) （贵大培育[2019]58号）
