人工晶体学报2024，Vol.53Issue(1)：73-81,9.
p-Si/n-Ga2O3异质结制备与特性研究
Fabrication and Characteristics of p-Si/n-Ga2O3 Heterojunction
摘要
Abstract
PN junction with p-Si/n-Ga2O3 structure was developed by metal organic chemical vapor deposition(MOCVD)technology on p-type Si(111)substrate.The crystal structure,surface morphology and surface roughness were measured by X-ray diffractometer and atomic force microscope.Then Ti/Au electrodes on these samples were developed by magnet sputtering and evaporation for testing the PN junction characteristics such as Ⅰ-Ⅴ curve chart,threshold voltage,on-off current ratio,reverse saturation current,ideal factor,and the barrier height at zero bias voltage.The regulation of PN junction characteristics with growing parameters such as doping concentration and film thickness was studied,and the reasons were given.The crystal quality of β-Ga2 O3 thin film and the characteristics of the devices were improved by two-step growing method.A set of PN junction samples were fabricated at three different temperatures when the buffer was developed.Finally,the best conditions of fabricating the PN junction devices was found,and the lattice mismatch and thermal mismatch between Si substrate and β-Ga2O3 thin film were reduced.A high quality n-type β-Ga2O3 thin film with surface roughness of 4.21 nm and a PN junction with low ideal factor of 42.1 was obtained.关键词
β-Ga2O3薄膜/金属有机化学气相沉积/p-Si/n-Ga2O3/PN结/晶体质量/电学特性Key words
β-Ga2 O3 thin film/metal organic chemical vapor deposition/p-Si/n-Ga2 O3/PN junction/crystal quality/electrical property分类
信息技术与安全科学引用本文复制引用
陈沛然,焦腾,陈威,党新明,刁肇悌,李政达,韩宇,于含,董鑫..p-Si/n-Ga2O3异质结制备与特性研究[J].人工晶体学报,2024,53(1):73-81,9.基金项目
吉林省自然科学基金(20230101124JC,20220101119JC) （20230101124JC,20220101119JC）
国家重点研发计划(2022YFB3605500) （2022YFB3605500）
