山西大学学报（自然科学版）2024，Vol.47Issue(1)：187-193,7.DOI:10.13451/j.sxu.ns.2023049
栅场板对AlGaN/GaN HEMT击穿特性的调控
Regulation of Gate-field Plate on Breakdown Characteristics of AlGaN/GaN HEMT
摘要
Abstract
The physical mechanism and related theoretical issues of improving the breakdown voltage of AlGaN/GaN High Electron Mobility Transistor(HEMT)by gate field plate are not studied deeply.In this paper,a gate-field plate is introduced into the tradition-al AlGaN/GaN HEMT structure to regulate the electric field distribution within the device and increase the breakdown voltage of the device.The device is modeled based on Silvaco TCAD software.The effects of gate field plate length,thickness and insulating mate-rial on the channel electric field distribution and breakdown voltage modulation of the device are studied by simulation calculation.The results show that the peak value of the channel electric field decreases with the increase of the length of the gate field plate,but when the length of the gate field plate increases to a certain value,the peak value of the channel electric field decreases;The thick-ness of grid field plate has little effect on the distribution of channel electric field;The higher the dielectric coefficient of the insulat-ing medium under the grid field plate,the smaller the peak electric field intensity of the channel;the device breakdown voltage is more than 800 V when the length of the gate field plate is 2.0 µm.关键词
AlGaN/GaN高电子迁移率晶体管/击穿特性/峰值电场/栅场板Key words
AlGaN/GaN high electron mobility transistor/breakdown characteristics/peak electric field/gate-field plate分类
信息技术与安全科学引用本文复制引用
王进军,徐晨昱,杨嘉伦,刘宇,冯岩,张世奇..栅场板对AlGaN/GaN HEMT击穿特性的调控[J].山西大学学报（自然科学版）,2024,47(1):187-193,7.基金项目
陕西省教育厅科研计划专项项目(18JK0103) （18JK0103）
