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基于传输线模型法ITO/p-Si接触性能研究实验设计

李金泽 许杰

实验科学与技术2023,Vol.21Issue(6):14-18,5.
实验科学与技术2023,Vol.21Issue(6):14-18,5.DOI:10.12179/1672-4550.20230103

基于传输线模型法ITO/p-Si接触性能研究实验设计

Experimental Design for ITO/p-Si Contact Properties Based on Transmission Line Model

李金泽 1许杰1

作者信息

  • 1. 南京邮电大学集成电路科学与工程学院,南京 210023
  • 折叠

摘要

Abstract

In response to the problem of single content in traditional transparent oxide thin film electrical performance testing experiments,combined with teachers'lectures and research project,an exploratory experiment"ITO/p-Si contact properties based on transmission line model"and the corresponding assessment system were designed.The variety law and reason of contact resistivity and barrier height of ITO/p-Si contacts under different preparation conditions were analyzed by testing their electrical properties.The experiment assessment system covers literature review,sample preparation,performance measurement,data analysis and extension experiment.The experiment is comprehensive and progressive,which can consolidate professional theoretical knowledge,stimulate students'interest in learning,and increase students'innovative ability.

关键词

接触性能/传输线模型/实验设计/透明导电氧化物

Key words

contact property/transmission line model/experimental design/transparent conductive oxide

分类

数理科学

引用本文复制引用

李金泽,许杰..基于传输线模型法ITO/p-Si接触性能研究实验设计[J].实验科学与技术,2023,21(6):14-18,5.

基金项目

国家自然科学基金(61904088). (61904088)

实验科学与技术

1672-4550

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