物理学报2024，Vol.73Issue(2)：198-205,8.DOI:10.7498/aps.73.20231440
双沟槽SiC 金属-氧化物-半导体型场效应管重离子单粒子效应
Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistors
李洋帆 1郭红霞 2张鸿 3白如雪 1张凤祁 2马武英 2钟向丽 1李济芳 1卢小杰1
作者信息
- 1. 湘潭大学材料科学与工程学院,湘潭 411105
- 2. 西北核技术研究所,西安 710024
- 3. 湘潭大学材料科学与工程学院,湘潭 411105||工业和信息化部第五研究所,电子元器件可靠性物理及其应用技术国家重点实验室,广州 510610
- 折叠
摘要
Abstract
In this paper,experiments on 208 MeV Ge ion irradiation with different source-drain bias voltages are carried out for the double-trench SiC metal-oxide-semiconductor field-effect transistors,and the physical mechanism of the single event effect is analyzed.The experimental results show that the drain leakage current of the device increases more obviously with the increase of the initial bias voltage during irradiation.When the bias voltage is 400 V during irradiation,the device has a single event burned at a fluence of 9×104 ion/cm2,and when the bias voltage is 500 V,the device has a single event burned at a fluence of 3×104 ion/cm2,so when the LET value is 37.3 MeV·cm2/mg,the SEB threshold of DUT does not exceed 400 V,which is lower than 34%of the rated operational voltage.The post gate-characteristics test results show that the leakage current of the device with a bias voltage of 100 V does not change significantly during irradiation.When the bias voltage is 200 V,the gate leakage and the drain leakage of the device both increase,so do they when the bias voltage is 300 V,which is positively related to bias voltage.In order to further analyze the single particle effect mechanism of device,the simulation is conducted by using TCAD tool.The simulation results show that at low bias voltage,the heavy ion incident device generates electron-hole pairs,the electrons are quickly swept out,and the holes accumulate at the gate oxygen corner under the effect of the electric field,which combines the source-drain bias voltage,leading to the formation of leakage current channels in the gate oxygen layer.The simulation results also show that at high bias voltage,the electrons generated by the incident heavy ion move towards the junction of the N-drift layer and the N+ substrate under the effect of the electric field,which further increases the electric field strength and causes significant impact ionization.The local high current density generated by the impact ionization and the load large electric field causes the lattice temperature to exceed the melting point of silicon carbide,causing single event burnout.This work provides a reference and support for studying the radiation effect mechanism and putting silicon carbide power devices into aerospace applications.关键词
双沟槽SiC金属-氧化物-半导体型场效应管/重离子辐照/单粒子烧毁Key words
SiC double-trench metal-oxide-semiconductor field-effect transistors/heavy ion irradiation/single event burnout引用本文复制引用
李洋帆,郭红霞,张鸿,白如雪,张凤祁,马武英,钟向丽,李济芳,卢小杰..双沟槽SiC 金属-氧化物-半导体型场效应管重离子单粒子效应[J].物理学报,2024,73(2):198-205,8.
