液晶与显示2024，Vol.39Issue(1)：40-47,8.DOI:10.37188/CJLCD.2023-0349
氧化锌锡薄膜晶体管的制备与性能研究
Performances and preparation of zinc-tin oxide thin-film transistors
摘要
Abstract
In order to improve the performance of thin film transistors(TFT),the high-performance ZTO thin film transistors is prepared on SiO2/p-Si substrates based on radio frequency magnetron sputtering technology,using zinc tin oxide(ZTO)material as the channel layer.The effects of sputtering power on the surface morphology and optical properties of ZTO thin films were studied using AFM,XRD,and UV-Vis.The electrical performance of ZTO thin film transistors is tested using a Semiconductor Device Analyser.XPS analysis is used to study the influence of sputtering power on the elemental composition and valence states in ZTO thin films,and to explore the principle and mechanism of high-performance thin film transistors.The results show that all ZTO thin film samples have an amorphous structure,dense surface,and transmittance greater than 90%.The electrical performance of ZTO thin film transistors can be improved by increasing the sputtering power appropriately.The thin film transistor prepared at 90 W sputtering power has the good comprehensive performance,with saturation mobility of 15.61 cm2/(V·s),subthreshold swing of 0.30 V/decade,threshold voltage of-5.06 V,and current switching ratio of 8.92×109.关键词
薄膜晶体管/溅射功率/XPS分析/ZTO薄膜Key words
thin-film transistor/sputtering power/XPS analysis/ZTO thin film分类
信息技术与安全科学引用本文复制引用
初学峰,胡小军,张祺,黄林茂,谢意含..氧化锌锡薄膜晶体管的制备与性能研究[J].液晶与显示,2024,39(1):40-47,8.基金项目
吉林省科技发展计划(No.20220201068GX)Supported by Jilin Province Science and Technology Development Plan(No.20220201068GX) （No.20220201068GX）
