原子与分子物理学报2024，Vol.41Issue(3)：170-175,6.DOI:10.19855/j.1000-0364.2024.036006
有源区掺杂的AlGaN基深紫外激光二极管性能优化
Performance optimization of AlGaN-based deep-ultraviolet laser diodes with doped active region
摘要
Abstract
In order to improve the operating performance of the deep-ultraviolet laser diodes(DUV-LD),three structures of n-doped,p-doped and n-p-doped with active region quantum barrier are proposed in this paper.Using Crosslight software,the original structure and the three active region doped structures are simu-lated and studied to compare the P-I characteristic curves,V-I characteristic curves,carrier concentrations,radiation recombination rates and energy band diagrams of the four structures.The simulation results show that the performance of n-p doped structure is better,i.e.,its threshold voltage and threshold current of the n-p doped structure decrease to 4.40 V and 23.8 mA,respectively;radiation recombination rate reaches 1.64cm-3/s;The electro-optical conversion efficiency reaches 42.1％at the same injection current,which increases 3.9％compared with the original structure and greatly improves the operating performance of the DUV-LD.关键词
AlGaN/有源区/量子势垒/掺杂/深紫外激光二极管Key words
AlGaN/Active region/Quantum barrier/Doped/Deep-ultraviolet laser diode分类
数理科学引用本文复制引用
尹孟爽,张傲翔,张鹏飞,贾李亚,王芳,刘俊杰,刘玉怀..有源区掺杂的AlGaN基深紫外激光二极管性能优化[J].原子与分子物理学报,2024,41(3):170-175,6.基金项目
国家自然科学基金(62174148) （62174148）
国家重点研发计划(2022YFE0112000,2016YFE0118400) （2022YFE0112000,2016YFE0118400）
智汇郑州·1125聚才计划(ZZ2018-45),宁波2025科技创新重大专项(2019B10129) （ZZ2018-45）
