原子与分子物理学报2024，Vol.41Issue(5)：153-158,6.DOI:10.19855/j.1000-0364.2024.056005
非层状二维CdSe的制备及厚度对带隙的影响
Preparation of nonlayered two-dimensional CdSe and effect of thickness on bandgap
摘要
Abstract
Two-dimensional semiconductor materials with natural bandgap are expected to make up for the zero bandgap defect of graphene and break the bottleneck of its application in fields such as field effect transistors,switching devices,logic circuits.Compared with layered semiconductor materials,non-layered semiconductor materials are usually bound by strong ionic/covalent bonds and are isotropic,so it is a challenge to obtain their two-dimensional structures.In this paper,two-dimensional anisotropic growth of nonlayered CdSe on mica substrate was achieved by chemical vapor deposition.The microstructure,crystalline structure and optical prop-erties of two-dimensional CdSe were characterized in detail.The results show that the sample has a significant photoluminescence(PL)effect,indicating that the thickness thinning to nanometer level does not destroy the di-rect bandgap property of CdSe.In addition,with the decrease of thickness,PL peaks of the sample are gradually blue-shifted.In order to further explain this phenomenon,the energy band structures of CdSe with different thickness were studied using the first-principles caculation based on density functional theory.The results show that they all have direct bandgap,and the bandgap increases with the decreasing thickness,which is consistent with the experimental phenomenon.Therefore,the effective control of the bandgap can be achieved by adjusting the thickness of two-dimensional CdSe through the growth parameters,which has guiding significance for the performance improvement of related optoelectronic devices.关键词
非层状半导体材料/二维CdSe/化学气相沉积/带隙/第一性原理Key words
Non-layered semiconductor materials/Two-dimensional CdSe/Chemical vapor deposition/Bandgap/First principles分类
化学化工引用本文复制引用
李婷,张文婷,王红艳,李秀梅,雷子煊,夏晓凤..非层状二维CdSe的制备及厚度对带隙的影响[J].原子与分子物理学报,2024,41(5):153-158,6.基金项目
国家自然科学基金青年科学基金项目(51902272) （51902272）
四川省科技厅计划项目(2021YFG0228,2682021GF007) （2021YFG0228,2682021GF007）
