中国电机工程学报2024，Vol.44Issue(1)：214-230,中插18,18.DOI:10.13334/j.0258-8013.pcsee.223284
高压大功率IGBT器件绝缘结构的电场计算研究综述
Review on the Electric Field Calculation of Insulation Structure of High-voltage and High-power IGBT Device
摘要
Abstract
With the development of high voltage direct current transmission technology,high-voltage and high-power insulated gate bipolar transistor(IGBT)devices are widely used in various high-voltage and high-capacity power converters and control equipment.However,during the development of high-voltage and high-power IGBT devices,partial discharge and even breakdown phenomena occur frequently and the insulation design of devices is facing great challenges.In order to achieve good insulation design of devices,it is necessary to obtain the electric field distribution inside the devices.Therefore,accurate calculation of the electric field inside the devices is crucial.In this paper,the development of modeling and calculation methods for internal insulation structures of devices are reviewed comprehensively.Moreover,the application scope of corresponding research,related research progress and shortcomings are introduced from three aspects:electric field calculation of insulation structure of chip,electric field calculation of packaging insulation,and coupling electric field calculation with the chip insulation and package insulation both considered.Finally,the development direction of electric field calculation for insulation structures of devices is prospected.关键词
绝缘栅双极型晶体管器件绝缘/封装结构/芯片终端/电场计算模型/边值问题Key words
insulated gate bipolar transistor(IGBT)device insulation/packaging structure/chip termination structure/electric field calculation model/boundary value problem分类
信息技术与安全科学引用本文复制引用
刘招成,崔翔,李学宝,马楚萱,赵志斌..高压大功率IGBT器件绝缘结构的电场计算研究综述[J].中国电机工程学报,2024,44(1):214-230,中插18,18.基金项目
国家自然科学基金项目(52077073).Project Supported by National Natural Science Foundation of China(52077073). （52077073）
