中国电机工程学报2024，Vol.44Issue(1)：244-254,中插20,12.DOI:10.13334/j.0258-8013.pcsee.222493
一种基于开通栅极电压的新型IGBT键合线老化监测方法
A Novel Bonding Wires Aging Monitoring Method for IGBT Based on the Turn-on Gate Voltage
摘要
Abstract
Reliable operation of insulated gate bipolar transistors(IGBTs)is of high importance for safety and performance of traction converter.As a common failure mode of the IGBT,bonding wires aging monitoring is highly helpful.This paper proposes a novel aging monitoring method using the turn-on gate voltage(ugem),in which the effects of temperature and load current on the monitoring can be avoided.First,based on the equivalent circuit model of the IGBT,the behavior of ugem with bonding wire aging is thoroughly characterized.Then,the double-pulse experiments are carried out to verify the theoretical analysis,and the effects of temperature and load current are analyzed in detail.Considering that the ugem local features may be affected by temperature and load current,a bonding wire aging monitoring method using the entire waveform of the ugem is accordingly proposed,in which the supervised linear discriminant analysis(LDA)is used to reduce the dimensionality of data,and the support vector machine(SVM)is performed to detect the bond wire fracture.Finally,the effectiveness of the proposed method is verified by conducting experimental tests.关键词
绝缘栅双极型晶体管模块/键合线老化/开通栅极电压/状态监测Key words
insulated gate bipolar transistors(IGBT)module/bond wire aging/turn-on gate voltage/condition monitoring分类
信息技术与安全科学引用本文复制引用
柴育恒,葛兴来,张林林,王惠民,张艺驰,邓清丽..一种基于开通栅极电压的新型IGBT键合线老化监测方法[J].中国电机工程学报,2024,44(1):244-254,中插20,12.基金项目
高铁联合基金重点项目(U1934204).Project Supported by High-speed Railway Joint Funds of the National Natural Science Foundation of China(U1934204). （U1934204）
