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Anisotropic etching mechanisms of 4H-SiC:Experimental and first-principles insights

Guang Yang Lingbo Xu Can Cui Xiaodong Pi Deren Yang Rong Wang

Journal of Semiconductors2024，Vol.45Issue(1)：P.42-47,6.

Journal of Semiconductors2024，Vol.45Issue(1)：P.42-47,6.DOI:10.1088/1674-4926/45/1/012502

Anisotropic etching mechanisms of 4H-SiC:Experimental and first-principles insights

Guang Yang ¹Lingbo Xu ¹Can Cui ²Xiaodong Pi ³Deren Yang ³Rong Wang³

作者信息

1. Key Laboratory of Optical Field Manipulation of Zhejiang Province,Department of Physics,Zhejiang Sci-Tech University,Hangzhou 310018,China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,HangzhoIun novation Center,Zhejiang University,Hangzhou 311200,China
2. Key Laboratory of Optical Field Manipulation of Zhejiang Province,Department of Physics,Zhejiang Sci-Tech University,Hangzhou 310018,China
3. State Key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,HangzhoIun novation Center,Zhejiang University,Hangzhou 311200,China
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摘要

关键词

principles/alkali/etching

分类

数理科学

引用本文复制引用

Guang Yang,Lingbo Xu,Can Cui,Xiaodong Pi,Deren Yang,Rong Wang..Anisotropic etching mechanisms of 4H-SiC:Experimental and first-principles insights[J].Journal of Semiconductors,2024,45(1):P.42-47,6.

基金项目

This work is supported by the Natural Science Foundation of China(Grant Nos.62274143&62204216) （Grant Nos.62274143&62204216）

Joint Funds of the Zhejiang Provincial Natural Science Foundation of China(Grant Nos.LHZSD24E020001) （Grant Nos.LHZSD24E020001）

the“Pioneer”and“Leading Goose”R&D Program of Zhejiang(Grant Nos.2022C0102&2023C01010) （Grant Nos.2022C0102&2023C01010）

Partial support was provided by the Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou(Grant No.TD2022012) （Grant No.TD2022012）

Fundamental Research Funds for the Central Universities(Grant No.226-2022-00200) （Grant No.226-2022-00200）

the Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005) （Grant No.61721005）

the Open Fund of Zhejiang Provincial Key Laboratory of Wide Bandgap Semiconductors,Hangzhou Global Scientific and Technological Innovation Center,Zhejiang University. （）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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