Anisotropic etching mechanisms of 4H-SiC:Experimental and first-principles insightsOA北大核心CSTPCD
Molten-alkali etching has been widely used to reveal dislocations in 4H silicon carbide(4H-SiC),which has promoted the identification and statistics of dislocation density in 4H-SiC single crystals.However,the etching mechani…查看全部>>
Guang Yang;Lingbo Xu;Can Cui;Xiaodong Pi;Deren Yang;Rong Wang
Key Laboratory of Optical Field Manipulation of Zhejiang Province,Department of Physics,Zhejiang Sci-Tech University,Hangzhou 310018,China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,HangzhoIun novation Center,Zhejiang University,Hangzhou 311200,ChinaKey Laboratory of Optical Field Manipulation of Zhejiang Province,Department of Physics,Zhejiang Sci-Tech University,Hangzhou 310018,China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,HangzhoIun novation Center,Zhejiang University,Hangzhou 311200,ChinaKey Laboratory of Optical Field Manipulation of Zhejiang Province,Department of Physics,Zhejiang Sci-Tech University,Hangzhou 310018,ChinaState Key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,HangzhoIun novation Center,Zhejiang University,Hangzhou 311200,ChinaState Key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,HangzhoIun novation Center,Zhejiang University,Hangzhou 311200,ChinaState Key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,HangzhoIun novation Center,Zhejiang University,Hangzhou 311200,China
物理学
principlesalkalietching
《Journal of Semiconductors》 2024 (1)
P.42-47,6
This work is supported by the Natural Science Foundation of China(Grant Nos.62274143&62204216)Joint Funds of the Zhejiang Provincial Natural Science Foundation of China(Grant Nos.LHZSD24E020001)the“Pioneer”and“Leading Goose”R&D Program of Zhejiang(Grant Nos.2022C0102&2023C01010)Partial support was provided by the Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou(Grant No.TD2022012)Fundamental Research Funds for the Central Universities(Grant No.226-2022-00200)the Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005)the Open Fund of Zhejiang Provincial Key Laboratory of Wide Bandgap Semiconductors,Hangzhou Global Scientific and Technological Innovation Center,Zhejiang University.
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