Journal of Semiconductors2024,Vol.45Issue(2):P.10-20,11.DOI:10.1088/1674-4926/45/2/021501
Progress in efficient doping of Al-rich AlGaN
摘要
关键词
AlGaN-based UV-LEDs/Al-rich AlGaN/doping分类
信息技术与安全科学引用本文复制引用
Jiaming Wang,Fujun Xu,Lisheng Zhang,Jing Lang,Xuzhou Fang,Ziyao Zhang,Xueqi Guo,Chen Ji,Chengzhi Ji,Fuyun Tan,Xuelin Yang,Xiangning Kang,Zhixin Qin,Ning Tang,Xinqiang Wang,Weikun Ge,Bo Shen..Progress in efficient doping of Al-rich AlGaN[J].Journal of Semiconductors,2024,45(2):P.10-20,11.基金项目
This work was supported by the National Key Research and Development Program of China(No.2022YFB3605100) (No.2022YFB3605100)
the National Natural Science Foundation of China(Nos.62234001,61927806,61974002,62135013,and 62075081) (Nos.62234001,61927806,61974002,62135013,and 62075081)
the Key-Area Research and Development Program of Guangdong Province(No.2020B010172001) (No.2020B010172001)
the Major Scientific and Technological Innovation Project(MSTIP)of Shandong Province(No.2019JZZY010209). (MSTIP)