首页|期刊导航|Journal of Semiconductors|Controllable step-flow growth of GaN on patterned freestanding substrate
Journal of Semiconductors2024,Vol.45Issue(2):P.46-50,5.DOI:10.1088/1674-4926/45/2/022501
Controllable step-flow growth of GaN on patterned freestanding substrate
摘要
关键词
step-flow growth/GaN/terrace width/step motion分类
信息技术与安全科学引用本文复制引用
Peng Wu,Jianping Liu,Lei Hu,Xiaoyu Ren,Aiqin Tian,Wei Zhou,Fan Zhang,Xuan Li,Masao Ikeda,Hui Yang..Controllable step-flow growth of GaN on patterned freestanding substrate[J].Journal of Semiconductors,2024,45(2):P.46-50,5.基金项目
This work was supported by the National Key Research and Development Program of China(2022YFB2802801) (2022YFB2802801)
the National Natural Science Foundation of China(61834008,U21A20493) (61834008,U21A20493)
the Key Research and Development Program of Jiangsu Province(BE2020004,BE2021008-1) (BE2020004,BE2021008-1)
the Suzhou Key Laboratory of New-type Laser Display Technology(SZS2022007). (SZS2022007)