Controllable step-flow growth of GaN on patterned freestanding substrateOA北大核心CSTPCD
A new kind of step-flow growth mode is proposed,which adopts sidewall as step source on patterned GaN substrate.The terrace width of steps originated from the sidewall was found to change with the growth temperature and ammonia flux.The growth mechanism is explained and simulated based on step motion model.This work helps better understand the behaviors of step advancement and puts forward a method of precisely modulating atomic steps.
Peng Wu;Jianping Liu;Lei Hu;Xiaoyu Ren;Aiqin Tian;Wei Zhou;Fan Zhang;Xuan Li;Masao Ikeda;Hui Yang;
Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201210,China University of Chinese Academy of Sciences,Beijing 100049,ChinaKey Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,ChinaKey Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China
电子信息工程
step-flow growthGaNterrace widthstep motion
《Journal of Semiconductors》 2024 (002)
P.46-50 / 5
This work was supported by the National Key Research and Development Program of China(2022YFB2802801);the National Natural Science Foundation of China(61834008,U21A20493);the Key Research and Development Program of Jiangsu Province(BE2020004,BE2021008-1);the Suzhou Key Laboratory of New-type Laser Display Technology(SZS2022007).
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