首页|期刊导航|Journal of Semiconductors|Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy
Journal of Semiconductors2024，Vol.45Issue(1)：P.48-54,7.DOI:10.1088/1674-4926/45/1/012503
Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy
摘要
关键词
GaN/InGaN/GaN/tunnel junctions/polarization-engineering/molecular beam epitaxy分类
信息技术与安全科学引用本文复制引用
Jun Fang,Fan Zhang,Wenxian Yang,Aiqin Tian,Jianping Liu,Shulong Lu,Hui Yang..Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy[J].Journal of Semiconductors,2024,45(1):P.48-54,7.基金项目
This work was supported by the National Key Research and Development Program of China(2017YFE0131500,2022YFB2802801) （2017YFE0131500,2022YFB2802801）
the National Natural Science Foundation of China(61834008,U21A20493) （61834008,U21A20493）
the Key Research and Development Program of Jiangsu Province(BE2020004,BE2021008-1) （BE2020004,BE2021008-1）
the Suzhou Key Laboratory of New-type Laser Display Technology(SZS2022007).The authors are grateful for the technical support for Nano-X from the Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(SINANO),Chinese Academy of Sciences. （SZS2022007）
