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240 nm AlGaN-based deep ultraviolet micro-LEDs:size effect versus edge effect

Shunpeng Lu Jiangxiao Bai Hongbo Li Ke Jiang Jianwei Ben Shanli Zhang Zi-Hui Zhang Xiaojuan Sun Dabing Li

Journal of Semiconductors2024，Vol.45Issue(1)：P.55-62,8.

Journal of Semiconductors2024，Vol.45Issue(1)：P.55-62,8.DOI:10.1088/1674-4926/45/1/012504

240 nm AlGaN-based deep ultraviolet micro-LEDs:size effect versus edge effect

Shunpeng Lu ¹Jiangxiao Bai ¹Hongbo Li ¹Ke Jiang ¹Jianwei Ben ¹Shanli Zhang ¹Zi-Hui Zhang ²Xiaojuan Sun ¹Dabing Li¹

作者信息

1. State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
2. State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China Key Laboratory of Electronic Materials and Devices of Tianjin,School of Electronics and Information Engineering,Hebei University of Technology,Tianjin 300401,China
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摘要

关键词

AlGaN/deep ultraviolet/micro-LEDs/light extraction efficiency/size effect/edge effect

分类

信息技术与安全科学

引用本文复制引用

Shunpeng Lu,Jiangxiao Bai,Hongbo Li,Ke Jiang,Jianwei Ben,Shanli Zhang,Zi-Hui Zhang,Xiaojuan Sun,Dabing Li..240 nm AlGaN-based deep ultraviolet micro-LEDs:size effect versus edge effect[J].Journal of Semiconductors,2024,45(1):P.55-62,8.

基金项目

This work was supported by National Key R&D Program of China(2022YFB3605103) （2022YFB3605103）

the National Natural Science Foundation of China(62204241,U22A2084,62121005,and 61827813) （62204241,U22A2084,62121005,and 61827813）

the Natural Science Foundation of Jilin Province(20230101345JC,20230101360JC,and 20230101107JC) （20230101345JC,20230101360JC,and 20230101107JC）

the Youth Innovation Promotion Association of CAS(2023223) （2023223）

the Young Elite Scientist Sponsorship Program By CAST(YESS20200182) （YESS20200182）

the CAS Talents Program(E30122E4M0). （E30122E4M0）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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