240 nm AlGaN-based deep ultraviolet micro-LEDs:size effect versus edge effectOA北大核心CSTPCD
240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.He…查看全部>>
Shunpeng Lu;Jiangxiao Bai;Hongbo Li;Ke Jiang;Jianwei Ben;Shanli Zhang;Zi-Hui Zhang;Xiaojuan Sun;Dabing Li
State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China Key Laboratory of Electronic Materials and Devices of Tianjin,School of Electronics and Information Engineering,Hebei University of Technology,Tianjin 300401,ChinaState Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
电子信息工程
AlGaNdeep ultravioletmicro-LEDslight extraction efficiencysize effectedge effect
《Journal of Semiconductors》 2024 (1)
P.55-62,8
This work was supported by National Key R&D Program of China(2022YFB3605103)the National Natural Science Foundation of China(62204241,U22A2084,62121005,and 61827813)the Natural Science Foundation of Jilin Province(20230101345JC,20230101360JC,and 20230101107JC)the Youth Innovation Promotion Association of CAS(2023223)the Young Elite Scientist Sponsorship Program By CAST(YESS20200182)the CAS Talents Program(E30122E4M0).
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