Journal of Semiconductors2024，Vol.45Issue(2)：P.34-39,6.DOI:10.1088/1674-4926/45/2/022101
Enhanced thermal emission from metal-free,fully epitaxial structures with epsilon-near-zero InAs layers
Karolis Stašys 1Andrejus Geižutis 1Jan Devenson1
作者信息
- 1. State Research Institute Center for Physical Sciences and Technology,Savanoriųave.231,L-T02300 Vilnius,Lithuania
- 折叠
摘要
关键词
epsilon-near-zero/thermal emitters/indium arsenide/LWIR(long wave infraRed)/molecular beam epitaxy分类
信息技术与安全科学引用本文复制引用
Karolis Stašys,Andrejus Geižutis,Jan Devenson..Enhanced thermal emission from metal-free,fully epitaxial structures with epsilon-near-zero InAs layers[J].Journal of Semiconductors,2024,45(2):P.34-39,6.
