Enhanced thermal emission from metal-free,fully epitaxial structures with epsilon-near-zero InAs layersOA北大核心CSTPCD

We introduce a novel method to create mid-infrared(MIR)thermal emitters using fully epitaxial,metal-free structures.Through the strategic use of epsilon-near-zero(ENZ)thin films in InAs layers,we achieve a narrow-band,wide-angle,and p-polarized thermal emission spectra.This approach,employing molecular beam epitaxy,circumvents the complexities associated with current layered structures and yields temperature-resistant emission wavelengths.Our findings contribute a promising route towards simpler,more efficient MIR optoelectronic devices.