GaN based ultraviolet laser diodesOA北大核心CSTPCD
In the past few years,many groups have focused on the research and development of GaN-based ultraviolet laser diodes(UV LDs).Great progresses have been achieved even though many challenges exist.In this article,we analyze the challenges of developing GaN-based ultraviolet laser diodes,and the approaches to improve the performance of ultraviolet laser diode are reviewed.With these techniques,room temperature(RT)pulsed oscillation of AlGaN UVA(ultraviolet A)LD has been realized,with a lasing wavelength of 357.9 nm.Combining with the suppression of thermal effect,the high output power of 3.8 W UV LD with a lasing wavelength of 386.5 nm was also fabricated.
Jing Yang;Degang Zhao;Zongshun Liu;Yujie Huang;Baibin Wang;Xiaowei Wang;Yuheng Zhang;Zhenzhuo Zhang;Feng Liang;Lihong Duan;Hai Wang;Yongsheng Shi;
State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,ChinaState Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
电子信息工程
diodeslaserGaN
《Journal of Semiconductors》 2024 (001)
P.6-15 / 10
This work was supported by the National Key R&D Program of China(2022YFB3605104);National Natural Science Foundation of China(62250038,61904172,61974162,62034008,62074142,and 62074140);Strategic Priority Research Program of Chinese Academy of Sciences(XDB43030101);Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(2022SX-TD016).
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