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GaN based ultraviolet laser diodes

Jing Yang Degang Zhao Zongshun Liu Yujie Huang Baibin Wang Xiaowei Wang Yuheng Zhang Zhenzhuo Zhang Feng Liang Lihong Duan Hai Wang Yongsheng Shi

Journal of Semiconductors2024,Vol.45Issue(1):P.6-15,10.
Journal of Semiconductors2024,Vol.45Issue(1):P.6-15,10.DOI:10.1088/1674-4926/45/1/011501

GaN based ultraviolet laser diodes

Jing Yang 1Degang Zhao 2Zongshun Liu 1Yujie Huang 1Baibin Wang 1Xiaowei Wang 1Yuheng Zhang 1Zhenzhuo Zhang 1Feng Liang 1Lihong Duan 1Hai Wang 1Yongsheng Shi1

作者信息

  • 1. State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • 2. State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
  • 折叠

摘要

关键词

diodes/laser/GaN

分类

信息技术与安全科学

引用本文复制引用

Jing Yang,Degang Zhao,Zongshun Liu,Yujie Huang,Baibin Wang,Xiaowei Wang,Yuheng Zhang,Zhenzhuo Zhang,Feng Liang,Lihong Duan,Hai Wang,Yongsheng Shi..GaN based ultraviolet laser diodes[J].Journal of Semiconductors,2024,45(1):P.6-15,10.

基金项目

This work was supported by the National Key R&D Program of China(2022YFB3605104) (2022YFB3605104)

National Natural Science Foundation of China(62250038,61904172,61974162,62034008,62074142,and 62074140) (62250038,61904172,61974162,62034008,62074142,and 62074140)

Strategic Priority Research Program of Chinese Academy of Sciences(XDB43030101) (XDB43030101)

Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(2022SX-TD016). (2022SX-TD016)

Journal of Semiconductors

OACSTPCDEI

1674-4926

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