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Two-step growth of β-Ga_(2)O_(3) on c-plane sapphire using MOCVD for solar-blind photodetector

Peipei Ma Jun Zheng Xiangquan Liu Zhi Liu Yuhua Zuo Buwen Cheng

Journal of Semiconductors2024，Vol.45Issue(2)：P.51-56,6.

Journal of Semiconductors2024，Vol.45Issue(2)：P.51-56,6.DOI:10.1088/1674-4926/45/2/022502

Two-step growth of β-Ga_(2)O_(3) on c-plane sapphire using MOCVD for solar-blind photodetector

Peipei Ma ¹Jun Zheng ¹Xiangquan Liu ¹Zhi Liu ¹Yuhua Zuo ¹Buwen Cheng¹

作者信息

1. State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
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摘要

关键词

MOCVD/two-step growth/β-Ga_(2)O_(3)/solar-blind photodetector/responsivity

分类

信息技术与安全科学

引用本文复制引用

Peipei Ma,Jun Zheng,Xiangquan Liu,Zhi Liu,Yuhua Zuo,Buwen Cheng..Two-step growth of β-Ga_(2)O_(3) on c-plane sapphire using MOCVD for solar-blind photodetector[J].Journal of Semiconductors,2024,45(2):P.51-56,6.

基金项目

This work was supported by the National Key Research and Development Program of China(Grant No.2020YFB2206103)。（Grant No.2020YFB2206103）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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