首页|期刊导航|Journal of Semiconductors|11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

Yansheng Hu Yuangang Wang Wei Wang Yuanjie Lv Hongyu Guo Zhirong Zhang Hao Yu Xubo Song Xingye zhou Tingting Han Shaobo Dun Hongyu Liu Aimin Bu Zhihong Feng

Journal of Semiconductors2024，Vol.45Issue(1)：P.38-41,4.

Journal of Semiconductors2024，Vol.45Issue(1)：P.38-41,4.DOI:10.1088/1674-4926/45/1/012501

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

Yansheng Hu ¹Yuangang Wang ¹Wei Wang ¹Yuanjie Lv ¹Hongyu Guo ¹Zhirong Zhang ¹Hao Yu ¹Xubo Song ¹Xingye zhou ¹Tingting Han ¹Shaobo Dun ¹Hongyu Liu ¹Aimin Bu ¹Zhihong Feng¹

作者信息

1. National Key Laboratory of Solid-State Microwave Devices and Circuits,Hebei Semiconductor Research Institute,Shijiazhuang 050051,China
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摘要

关键词

freestanding GaN substrates/AlGaN/GaN HEMTs/continuous-wave power density/breakdown voltage/Γ-shaped gate

分类

信息技术与安全科学

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Yansheng Hu,Yuangang Wang,Wei Wang,Yuanjie Lv,Hongyu Guo,Zhirong Zhang,Hao Yu,Xubo Song,Xingye zhou,Tingting Han,Shaobo Dun,Hongyu Liu,Aimin Bu,Zhihong Feng..11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate[J].Journal of Semiconductors,2024,45(1):P.38-41,4.

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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