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Bidirectional rectifier with gate voltage control based on Bi_(2)O_(2)Se/WSe_(2)heterojunction

Ruonan Li Fangchao Lu Jiajun Deng Xingqiu Fu Wenjie Wang He Tian

Journal of Semiconductors2024，Vol.45Issue(1)：P.63-70,8.

Journal of Semiconductors2024，Vol.45Issue(1)：P.63-70,8.DOI:10.1088/1674-4926/45/1/012701

Bidirectional rectifier with gate voltage control based on Bi_(2)O_(2)Se/WSe_(2)heterojunction

Ruonan Li ¹Fangchao Lu ¹Jiajun Deng ¹Xingqiu Fu ¹Wenjie Wang ¹He Tian²

作者信息

1. North China Electric Power University and Hebei Key Laboratory of Physics and Energy Technology,Beijing 102206,China
2. School of Integrated Circuits&Beijing National Research on Information Science and Technology(BNRist),Tsinghua University,Beijing 100084,China
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摘要

关键词

Bi_(2)O_(2)Se/WSe_(2)/heterojunction/bidirectional rectification/optoelectronic devices

分类

信息技术与安全科学

引用本文复制引用

Ruonan Li,Fangchao Lu,Jiajun Deng,Xingqiu Fu,Wenjie Wang,He Tian..Bidirectional rectifier with gate voltage control based on Bi_(2)O_(2)Se/WSe_(2)heterojunction[J].Journal of Semiconductors,2024,45(1):P.63-70,8.

基金项目

This work was supported by the National Natural Science Foundation of China(61704054,92161115,62374099,and 62022047) （61704054,92161115,62374099,and 62022047）

the Fundamental Research Funds for the Central Universities(JB2020MS042 and JB2019MS051). （JB2020MS042 and JB2019MS051）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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