首页|期刊导航|Journal of Semiconductors|A 24−30 GHz 8-element dual-polarized 5G FR2 phased-array transceiver IC with 20.8-dBm TX OP1dB and 4.1-dB RX NF in 65-nm CMOS

A 24−30 GHz 8-element dual-polarized 5G FR2 phased-array transceiver IC with 20.8-dBm TX OP1dB and 4.1-dB RX NF in 65-nm CMOS

Yongran Yi Dixian Zhao Jiajun Zhang Peng Gu Chenyu Xu Yuan Chai Huiqi Liu Xiaohu You

Journal of Semiconductors2024，Vol.45Issue(1)：P.22-32,11.

Journal of Semiconductors2024，Vol.45Issue(1)：P.22-32,11.DOI:10.1088/1674-4926/45/1/012201

A 24−30 GHz 8-element dual-polarized 5G FR2 phased-array transceiver IC with 20.8-dBm TX OP1dB and 4.1-dB RX NF in 65-nm CMOS

Yongran Yi ¹Dixian Zhao ¹Jiajun Zhang ²Peng Gu ¹Chenyu Xu ¹Yuan Chai ²Huiqi Liu ³Xiaohu You¹

作者信息

1. National Mobile Communication Research Laboratory,Southeast University,Nanjing 211189,China Purple Mountain Laboratories,Nanjing 211111,China
2. Chengdu Xphased Technology Company Ltd.,Chengdu 610041,China
3. National Mobile Communication Research Laboratory,Southeast University,Nanjing 211189,China Chengdu Xphased Technology Company Ltd.,Chengdu 610041,China
折叠

摘要

关键词

fifth-generation(5G)/power amplifier/millimeter-wave/transceiver/phased-array

分类

信息技术与安全科学

引用本文复制引用

Yongran Yi,Dixian Zhao,Jiajun Zhang,Peng Gu,Chenyu Xu,Yuan Chai,Huiqi Liu,Xiaohu You..A 24−30 GHz 8-element dual-polarized 5G FR2 phased-array transceiver IC with 20.8-dBm TX OP1dB and 4.1-dB RX NF in 65-nm CMOS[J].Journal of Semiconductors,2024,45(1):P.22-32,11.

基金项目

This work was supported in part by the National Key Research and Development Program of China under Grant 2019YFB1803000 （）

in part by the Major Key Project of Peng Cheng Laboratory,Shenzhen,China,under Project PCL2021A01-2. （）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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