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首页|期刊导航|Journal of Semiconductors|A 24−30 GHz 8-element dual-polarized 5G FR2 phased-array transceiver IC with 20.8-dBm TX OP1dB and 4.1-dB RX NF in 65-nm CMOS

A 24−30 GHz 8-element dual-polarized 5G FR2 phased-array transceiver IC with 20.8-dBm TX OP1dB and 4.1-dB RX NF in 65-nm CMOSOA北大核心CSTPCD

中文摘要

This article presents an 8-element dual-polarized phased-array transceiver(TRX)front-end IC for millimeter-wave(mm-Wave)5G new radio(NR).Power enhancement technologies for power amplifiers(PA)in mm-Wave 5G phased-array TRX are discussed.A four-stage wideband high-power class-AB PA with distributed-active-transformer(DAT)power combining and multi-stage second-harmonic traps is proposed,ensuring the mitigated amplitude-to-phase(AM-PM)distortions across wide carrier frequencies without degrading transmitting(TX)power,gain and efficiency.TX and receiving(RX)switching is achieved by a matching network co-designed on-chip T/R switch.In each TRX element,6-bit 360°phase shifting and 6-bit 31.5-dB gain tuning are respectively achieved by the digital-controlled vector-modulated phase shifter(VMPS)and differential attenuator(ATT).Fabricated in 65-nm bulk complementary metal oxide semiconductor(CMOS),the proposed TRX demonstrates the measured peak TX/RX gains of 25.5/21.3 dB,covering the 24−29.5 GHz band.The measured peak TX OP1dB and power-added efficiency(PAE)are 20.8 dBm and 21.1%,respectively.The measured minimum RX NF is 4.1 dB.The TRX achieves an output power of 11.0−12.4 dBm and error vector magnitude(EVM)of 5%with 400-MHz 5G NR FR2 OFDM 64-QAM signals across 24−29.5 GHz,covering 3GPP 5G NR FR2 operating bands of n257,n258,and n261.

Yongran Yi;Dixian Zhao;Jiajun Zhang;Peng Gu;Chenyu Xu;Yuan Chai;Huiqi Liu;Xiaohu You;

National Mobile Communication Research Laboratory,Southeast University,Nanjing 211189,China Purple Mountain Laboratories,Nanjing 211111,ChinaChengdu Xphased Technology Company Ltd.,Chengdu 610041,ChinaNational Mobile Communication Research Laboratory,Southeast University,Nanjing 211189,China Chengdu Xphased Technology Company Ltd.,Chengdu 610041,China

电子信息工程

fifth-generation(5G)power amplifiermillimeter-wavetransceiverphased-array

《Journal of Semiconductors》 2024 (001)

P.22-32 / 11

This work was supported in part by the National Key Research and Development Program of China under Grant 2019YFB1803000;in part by the Major Key Project of Peng Cheng Laboratory,Shenzhen,China,under Project PCL2021A01-2.

10.1088/1674-4926/45/1/012201

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