Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_(1-x-y)Fe_(x)Ni_(y)SbOA北大核心CSTPCD
(Ga,Fe)Sb is a promising magnetic semiconductor(MS)for spintronic applications because its Curie temperature(T_(C))is above 300 K when the Fe concentration is higher than 20%.However,the anisotropy constant Ku of(Ga,Fe)Sb …查看全部>>
Zhi Deng;Hailong Wang;Qiqi Wei;Lei Liu;Hongli Sun;Dong Pan;Dahai Wei;Jianhua Zhao
State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,ChinState Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,ChinState Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,ChinState Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,ChinState Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,ChinState Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,ChinState Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,ChinState Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,Chin
物理学
magnetic semiconductormolecular beam epitaxyFe-Ni co-dopingmagnetic anisotropyhole mobility
《Journal of Semiconductors》 2024 (1)
P.16-21,6
This work is supported by the National Key R&D Program of China(No.2021YFA1202200)the CAS Project for Young Scientists in Basic Research(No.YSBR-030)the National Natural Science Foundation Program of China(No.12174383)H L Wang also acknowledges the support from the Youth Innovation Promotion Association,Chinese Academy of Sciences(No.2021110).
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