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Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_(1-x-y)Fe_(x)Ni_(y)Sb

Zhi Deng Hailong Wang Qiqi Wei Lei Liu Hongli Sun Dong Pan Dahai Wei Jianhua Zhao

Journal of Semiconductors2024，Vol.45Issue(1)：P.16-21,6.

Journal of Semiconductors2024，Vol.45Issue(1)：P.16-21,6.DOI:10.1088/1674-4926/45/1/012101

Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_(1-x-y)Fe_(x)Ni_(y)Sb

Zhi Deng ¹Hailong Wang ¹Qiqi Wei ¹Lei Liu ¹Hongli Sun ¹Dong Pan ¹Dahai Wei ¹Jianhua Zhao¹

作者信息

1. State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,Chin
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摘要

关键词

magnetic semiconductor/molecular beam epitaxy/Fe-Ni co-doping/magnetic anisotropy/hole mobility

分类

数理科学

引用本文复制引用

Zhi Deng,Hailong Wang,Qiqi Wei,Lei Liu,Hongli Sun,Dong Pan,Dahai Wei,Jianhua Zhao..Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga_(1-x-y)Fe_(x)Ni_(y)Sb[J].Journal of Semiconductors,2024,45(1):P.16-21,6.

基金项目

This work is supported by the National Key R&D Program of China(No.2021YFA1202200) （No.2021YFA1202200）

the CAS Project for Young Scientists in Basic Research(No.YSBR-030) （No.YSBR-030）

the National Natural Science Foundation Program of China(No.12174383) （No.12174383）

H L Wang also acknowledges the support from the Youth Innovation Promotion Association,Chinese Academy of Sciences(No.2021110). （No.2021110）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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