适用于SiC MOSFET的漏源电压积分自适应快速短路保护电路研究OA北大核心CSTPCD
Research on Drain-source Voltage Integration-based Adaptive Fast Short-circuit Protection Circuit for SiC MOSFET
SiC MOSFET因其高击穿电压、高开关速度、低导通损耗等性能优势而被广泛应用于各类电力电子变换器中.然而,由于其短路耐受时间仅为2～7 μs,且随母线电压升高而缩短,快速可靠的短路保护电路已成为其推广应用的关键技术之一.为应对不同母线电压下的SiC MOSFET短路故障,文中提出一种基于漏源电压积分的自适应快速短路保护方法(drain-source voltage integration-based adaptive fast short-c…查看全部>>
SiC MOSFETs have been widely used in various power electronic converters because of their high breakdown voltage,high switching speed,and low switching loss.However,since the short-circuit withstand time of SiC MOSFETs is only 2～7 μs and will be shortened with the increase of bus voltage,a fast and reliable short-circuit protection circuit has become one of the key technologies for their popularization and application.In order to deal with short-circuit faul…查看全部>>
李虹;胡肖飞;王玉婷;曾洋斌
北京交通大学电气工程学院,北京市 海淀区 100044北京交通大学电气工程学院,北京市 海淀区 100044广东电网有限责任公司韶关供电局,广东省 韶关市 512028清华大学电机工程与应用电子技术系,北京市 海淀区 100084
动力与电气工程
碳化硅金属氧化物半导体场效应晶体管短路保护漏源电压积分母线电压自适应
silicon carbide metal-oxide-semiconductor field-effect transistor(SiC MOSFET)short-circuit protectiondrain-source voltage integrationbus voltageadaptive
《中国电机工程学报》 2024 (4)
1542-1552,中插24,12
国家自然科学基金杰出青年基金项目(52325704)国家自然科学基金(重点项目)(52237008). Project Supported by the Distinguished Youth Scholars of National Natural Science Foundation of China(52325704)National Natural Science Foundation of China(Key Project)(52237008).
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