中国电机工程学报2024，Vol.44Issue(4)：1542-1552,中插24,12.DOI:10.13334/j.0258-8013.pcsee.222996
适用于SiC MOSFET的漏源电压积分自适应快速短路保护电路研究
Research on Drain-source Voltage Integration-based Adaptive Fast Short-circuit Protection Circuit for SiC MOSFET
摘要
Abstract
SiC MOSFETs have been widely used in various power electronic converters because of their high breakdown voltage,high switching speed,and low switching loss.However,since the short-circuit withstand time of SiC MOSFETs is only 2～7 μs and will be shortened with the increase of bus voltage,a fast and reliable short-circuit protection circuit has become one of the key technologies for their popularization and application.In order to deal with short-circuit faults at different bus voltages,this paper proposes a drain-source voltage integration-based adaptive fast short-circuit protection method(DSVI-AFSCPM).The protection performance of the proposed DSVI-AFSCPM is studied under hard switching fault(HSF)and fault under load(FUL).Furthermore,the action mechanism of different bus voltages on DSVI-AFSCPM is studied.At the same time,the influence of SiC MOSFET operating temperature on its response speed is explored.Finally,an experimental platform is built to test the protection performance of the proposed DSVI-AFSCPM at different bus voltages and operating temperatures under conditions of HSF and FUL.The experimental results show that the DSVI-AFSCPM proposed in this paper has excellent protection speed adaptability at different bus voltages,namely,the higher the bus voltage,the faster the short-circuit protection speed.And its response speed is less affected by the operating temperature of SiC MOSFET.Under the two short-circuit conditions,the operating temperatures change from 25℃to 125℃,and the short-circuit protection time doesn't change more than 90 ns.Therefore,this paper provides technical support for the reliable use of SiC MOSFET at different bus voltages.关键词
碳化硅金属氧化物半导体场效应晶体管/短路保护/漏源电压积分/母线电压/自适应Key words
silicon carbide metal-oxide-semiconductor field-effect transistor(SiC MOSFET)/short-circuit protection/drain-source voltage integration/bus voltage/adaptive分类
信息技术与安全科学引用本文复制引用
李虹,胡肖飞,王玉婷,曾洋斌..适用于SiC MOSFET的漏源电压积分自适应快速短路保护电路研究[J].中国电机工程学报,2024,44(4):1542-1552,中插24,12.基金项目
国家自然科学基金杰出青年基金项目(52325704) （52325704）
国家自然科学基金(重点项目)(52237008). Project Supported by the Distinguished Youth Scholars of National Natural Science Foundation of China(52325704) （重点项目）
National Natural Science Foundation of China(Key Project)(52237008). （Key Project）
