真空电子技术Issue(1)：36-41,6.DOI:10.16540/j.cnki.cn11-2485/tn.2024.01.08
ZnO和铪锆氧化物(Hf0.5Zr0.5O2)堆栈能带对准研究
Energy Band Alignment Study on ZnO and Hafnium Zirconium Oxide(Hf0.5Zr0.5O2)Stack
摘要
Abstract
Hf0.5Zr0.5O2(HZO)overcomes thedefects of traditional ferroelectric materials.It is compati-ble with CMOS processing and is scalable,which makes it a great development potential in high-end chip field.The bottleneck of HZO is the low cycle life.Most of researchers attempt to improve its ferroelectric properties and extend its lifespan through interface engineering,dielectric miscellaneous and other arts and crafts.ZnO is used as a transition layer between HZO and top electrode and the HZO/ZnO stacks are fab-ricated.The fundamental physical aspects of the ZnO transition layer and its interface with HZO,inclu-ding the energy band structure and the impact of annealing on energy band alignment are studied by using X-ray photoelectron spectroscopy.The results indicate that element diffusion and dipole moments change occur at the interface during the annealing process,resulting in a variation of the energy band offset in HZO/ZnO,and a transition of the heterojunction from type-Ⅱ to type-Ⅰ.This work provides a fundamental physical basis for ZnO transition layer in improving the lifespan of HZO-based memories.关键词
HZO/ZnO/XPS/界面Key words
HZO/ZnO/XPS/Interface分类
电子信息工程引用本文复制引用
郑旭,程雅慧,董红,孙垚鑫,刘澳,冯泽,井美艺,单一洋,刘晖,王维华,卢峰..ZnO和铪锆氧化物(Hf0.5Zr0.5O2)堆栈能带对准研究[J].真空电子技术,2024,(1):36-41,6.基金项目
国家重点研发计划项目(2018YFB2200500和2018YFB2200504)和国家自然科学基金项目(22090010和22090011) （2018YFB2200500和2018YFB2200504）
