真空电子技术Issue(1)：56-61,6.DOI:10.16540/j.cnki.cn11-2485/tn.2024.01.12
210kV全固态高压脉冲调制器设计
Design of a 210 kV All-solid-state High Voltage Pulse Modulator
辜霄 1彭伟 2江涛 2周江龙 2李长年3
作者信息
- 1. 电子科技大学 ,四川成都 610054||成都西科微波通讯有限公司 ,四川成都 610091
- 2. 63660 部队 ,河南洛阳 471000
- 3. 成都西科微波通讯有限公司 ,四川成都 610091
- 折叠
摘要
Abstract
To overcome the serious waveform distortion and poor reliability caused by high primary voltage in traditional high voltage pulse modulators,an all-solid-state high voltage pulse modulator with semiconductor device pulse switch is introduced.The design principle,structural characteristics,and driv-ing control method of the modulator are elaborated in detail.The modulator is composed of 18-stage mod-ules in parallel,and the energy storage capacitors,high-voltage charging,and solid-state switch drive power supply in each stage are all isolated by high-voltage silicon stacks.For each module,an independ-ently controlled high voltage insulated gate bipolar transistor(IGBT)is used to charge and discharge the energy storage capacitor.The IGBT driver circuit adopts high voltage silicon stack isolation power supply,fiber optic transmission trigger pulse,and high performance IGBT driver module.It has complete under-voltage,overcurrent,and overvoltage protection functions.The modulator outputs a square high voltage pulse with an amplitude greater than 210 kV and a pulse top width of 5 μs.The pulse leading edge is about 690ns,the pulse trailing edge is about 920ns,and the repetition frequency is 100 Hz.关键词
高功率微波/固态调制/IGBT/同步触发Key words
High power microwave/Solid-state modulation/IGBT/Synchronous trigger引用本文复制引用
辜霄,彭伟,江涛,周江龙,李长年..210kV全固态高压脉冲调制器设计[J].真空电子技术,2024,(1):56-61,6.
