强激光与粒子束2024，Vol.36Issue(3)：92-99,8.DOI:10.11884/HPLPB202436.230169
15nm Bulk nFinFET器件性能研究及参数优化
Performance research and parameter optimization of 15 nm Bulk nFinFET device
侯天昊 1范杰清 1赵强 2张芳 2郝建红 1董志伟2
作者信息
- 1. 华北电力大学电气与电子工程学院,北京 102206
- 2. 北京应用物理与计算数学研究所,北京 100094
- 折叠
摘要
Abstract
Due to the growing severity of the short-channel effect in semiconductor devices,a new type of device,the FinField-Effect Transistor(FinFET),has been proposed,developed and applied.This paper aims to establish a 15 nm n-type Bulk FinFET device model to investigate the impact of basic structural parameters,device temperature,and gate material on the performance of Bulk FinFETs.Simulations are conducted to analyze the effect of different gate lengths,fin widths,fin heights,channel doping concentration,device operating temperature,and gate materials on the performance of FinFETs.The results show that increasing the gate length,decreasing the fin width,and increasing the fin height can effectively suppress the short-channel effect.Moreover,the channel doping concentration below 1×1017 cm-3 has little effect on the device characteristics,while high doping concentration causes device failure.Additionally,increasing the operating temperature leads to device performance degradation.Finally,using high K dielectric material as the gate material is found to enhance device performance compared to using conventional SiO2 material.关键词
Bulk FinFET/短沟道效应/器件性能/参数优化/栅极材料Key words
Bulk FinFET/short channel effect/device performance/parameter optimization/gate material分类
信息技术与安全科学引用本文复制引用
侯天昊,范杰清,赵强,张芳,郝建红,董志伟..15nm Bulk nFinFET器件性能研究及参数优化[J].强激光与粒子束,2024,36(3):92-99,8.
