中国电机工程学报2024，Vol.44Issue(5)：1913-1923,中插21,12.DOI:10.13334/j.0258-8013.pcsee.223136
压接型IGBT芯片的参数分散性对其并联时关断均流的影响
Influence of Parameter Dispersion of Parallel Press-pack IGBT Chips on Its Current Sharing During Turn-off Process
摘要
Abstract
Serious current imbalance will occur during turn-off process of parallel press pack insulated gate bipolar transistor(IGBT),which directly affects the reliability of the device.This paper focuses on the influence of the chip parameter of press pack IGBT on the current sharing during its turn-off process.First,according to the turn-off mechanism and waveform of the single chip,the influence law of the chip parameter on the collector current variation in each stage is analyzed.Next,the first class of current competition and the second class of current competition in the turn-off waveform of dual chips are defined.Additionally,the random distribution model for the first class of current competition is established,and the influence law of chip parameter and the number of parallel connections on current sharing during turn-off process is obtained.Then,the validity of the proposed rule is verified by the double-pulse experiment on dual chips.Finally,based on the analysis results,some screening recommendations such as the mutual compensation of threshold voltage,saturation voltage drop,and keeping the threshold voltage difference and transconductance difference different signs are put forward.The research results of this paper can provide guidance for parameter screening of parallel press pack IGBT chips.关键词
压接型绝缘栅双极晶体管/关断均流/芯片参数/筛选建议Key words
press pack insulated gate bipolar transistor(IGBT)/current sharing during turn-off process/chip parameter/screening recommendations分类
信息技术与安全科学引用本文复制引用
曹子楷,崔翔,代安琪,李学宝,范迦羽,詹雍凡,唐新灵..压接型IGBT芯片的参数分散性对其并联时关断均流的影响[J].中国电机工程学报,2024,44(5):1913-1923,中插21,12.基金项目
国家电网有限公司科技项目(5500-202299490A-2-0-KJ). Science and Technology Project of State Grid of China(5500-202299490A-2-0-KJ). （5500-202299490A-2-0-KJ）
