中国电机工程学报2024，Vol.44Issue(5)：1924-1931,中插22,9.DOI:10.13334/j.0258-8013.pcsee.223138
质子注入缓冲层结构的高压FS-IGBT动态坚固性研究
Investigation on Dynamic Robustness of High Voltage FS-IGBT With Multiple Proton Injection Buffers Layer
摘要
Abstract
The dynamic robustness of FS-IGBT with multiple proton injection buffers(MPI)is changed compared with the same type of devices which has traditional phosphorus injection buffers.By studying the short-circuit characteristics of FS-IGBT with MPI buffer layer,it is found that the higher the number of peaks in MPI buffer layer,the stronger the resistance to short-circuit thermal failure.However,too many peaks may cause the gate voltage oscillation of IGBT during short-circuit,resulting in device failure.This is related to Kirk effect of IGBT under large short circuit current.Kirk effect results in the reduction of the electric field under the IGBT gate electrode and the decrease of the electron velocity,and then the accumulated electrons under the gate electrode cause the change of the gate input capacitance,leading to gate voltage oscillation.In addition,it is found that the hydrogen-related donors(HDs)concentration of MPI buffer layer peak is not only related to the injection dose and activation temperature,but also related to the injection times.The more the injection times,the higher the concentration of HDs caused by radiation damage.The turn-off robustness of IGBTs with different MPI buffer structures is also studied.关键词
多重质子注入/缓冲层/短路坚固性/振荡/Kirk效应Key words
multiple proton injection/buffer layer/short-circuit robustness/oscillation/Kirk effect分类
信息技术与安全科学引用本文复制引用
魏晓光,聂瑞芬,金锐,王耀华,李立,田宝华,王松华..质子注入缓冲层结构的高压FS-IGBT动态坚固性研究[J].中国电机工程学报,2024,44(5):1924-1931,中插22,9.基金项目
国家电网有限公司科技项目(5500-202158491A-0-5-ZN). Science and Technology Project of State Grid Corporation of China(5500-202158491A-0-5-ZN). （5500-202158491A-0-5-ZN）
