首页|期刊导航|Journal of Semiconductors|Visible-to-near-infrared photodetectors based on SnS/SnSe_(2)and SnSe/SnSe_(2)p−n heterostructures with a fast response speed and high normalized detectivity
Visible-to-near-infrared photodetectors based on SnS/SnSe_(2)and SnSe/SnSe_(2)p−n heterostructures with a fast response speed and high normalized detectivity
Xinfa Zhu Weishuai Duan Xiancheng Meng Xiyu Jia Yonghui Zhang Pengyu Zhou Mengjun Wang Hongxing Zheng Chao Fan
Journal of Semiconductors2024,Vol.45Issue(3):P.76-83,8.
Journal of Semiconductors2024,Vol.45Issue(3):P.76-83,8.DOI:10.1088/1674-4926/45/3/032703
Visible-to-near-infrared photodetectors based on SnS/SnSe_(2)and SnSe/SnSe_(2)p−n heterostructures with a fast response speed and high normalized detectivity
摘要
关键词
two-dimensional materials/tin diselenide/heterostructures/broad-spectrum photodetectors分类
信息技术与安全科学引用本文复制引用
Xinfa Zhu,Weishuai Duan,Xiancheng Meng,Xiyu Jia,Yonghui Zhang,Pengyu Zhou,Mengjun Wang,Hongxing Zheng,Chao Fan..Visible-to-near-infrared photodetectors based on SnS/SnSe_(2)and SnSe/SnSe_(2)p−n heterostructures with a fast response speed and high normalized detectivity[J].Journal of Semiconductors,2024,45(3):P.76-83,8.基金项目
supported by the Jilin Scientific and Technological Development Program(Grant No.20230101286JC) (Grant No.20230101286JC)
National Natural Science Foundation of China(Grant Nos.61975051,6227503,and 52002110) (Grant Nos.61975051,6227503,and 52002110)
Hebei Provincial Department of Education Innovation Ability Training Funding Project for graduate students. ()