A novel one-time-programmable memory unit based on Schottky-type p-GaN diodeOACSTPCDEI
In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown,and the state is permanently preserved.The memory unit features a current ratio of more than 10^(3),a read voltage window of 6 V,a programming time of less than 10^(−4)s,a stability of more than 108 read cycles,and a lifetime of far more than 10 years.Besides,the fabrication of the device is fully compatible with commercial Si-based GaN process platforms,which is of great significance for the realization of low-cost read-only memory in all-GaN integration.
Chao Feng;Xinyue Dai;Qimeng Jiang;Sen Huang;Jie Fan;Xinhua Wang;Xinyu Liu;
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China University of Chinese Academy of Sciences,Beijing 100049,ChinaInstitute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
电子信息工程
wide-bandgap semiconductorone-time programmableSchottky-type p-GaN dioderead-only memory device
《Journal of Semiconductors》 2024 (003)
P.53-57 / 5
supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400;in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS);in part by the CAS-Croucher Funding Scheme under Grant CAS22801;in part by National Natural Science Foundation of China under Grant 62334012,Grant 62074161,Grant 62004213,Grant U20A20208,and Grant 62304252;in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018;in part by the University of CAS;and in part by the IMECAS-HKUST-Joint Laboratory of Microelectronics.
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