首页|期刊导航|Journal of Semiconductors|A novel one-time-programmable memory unit based on Schottky-type p-GaN diode
Journal of Semiconductors2024，Vol.45Issue(3)：P.53-57,5.DOI:10.1088/1674-4926/45/3/032502
A novel one-time-programmable memory unit based on Schottky-type p-GaN diode
摘要
关键词
wide-bandgap semiconductor/one-time programmable/Schottky-type p-GaN diode/read-only memory device分类
信息技术与安全科学引用本文复制引用
Chao Feng,Xinyue Dai,Qimeng Jiang,Sen Huang,Jie Fan,Xinhua Wang,Xinyu Liu..A novel one-time-programmable memory unit based on Schottky-type p-GaN diode[J].Journal of Semiconductors,2024,45(3):P.53-57,5.基金项目
supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400 （）
in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS) （CAS）
in part by the CAS-Croucher Funding Scheme under Grant CAS22801 （）
in part by National Natural Science Foundation of China under Grant 62334012,Grant 62074161,Grant 62004213,Grant U20A20208,and Grant 62304252 （）
in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018 （）
in part by the University of CAS （）
and in part by the IMECAS-HKUST-Joint Laboratory of Microelectronics. （）
