首页|期刊导航|Journal of Semiconductors|Reliable ferroelectricity down to cryogenic temperature in wakeup free Hf_(0.5)Zr_(0.5)O_(2)thin films by thermal atomic layer deposition

Reliable ferroelectricity down to cryogenic temperature in wakeup free Hf_(0.5)Zr_(0.5)O_(2)thin films by thermal atomic layer deposition

Shuyu Wu Rongrong Cao Hao Jiang Yu Li Xumeng Zhang Yang Yang Yan Wang Yingfen Wei Qi Liu

Journal of Semiconductors2024，Vol.45Issue(3)：P.33-37,5.

Journal of Semiconductors2024，Vol.45Issue(3)：P.33-37,5.DOI:10.1088/1674-4926/45/3/032301

Reliable ferroelectricity down to cryogenic temperature in wakeup free Hf_(0.5)Zr_(0.5)O_(2)thin films by thermal atomic layer deposition

Shuyu Wu ¹Rongrong Cao ²Hao Jiang ³Yu Li ³Xumeng Zhang ³Yang Yang ⁴Yan Wang ⁴Yingfen Wei ³Qi Liu³

作者信息

1. State Key Laboratory of Fabrication Technologies for Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China University of Chinese Academy of Sciences,Beijing 100049,China
2. College of Electronic Science and Technology,National University of Defense Technology,Changsha 410073,China
3. Frontier institute of Chip and System,Fudan University,Shanghai 200433,China
4. State Key Laboratory of Fabrication Technologies for Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
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摘要

关键词

hafnia-zirconia solid solution/ferroelectricity/cryogenic temperature/wake-up effect

分类

通用工业技术

引用本文复制引用

Shuyu Wu,Rongrong Cao,Hao Jiang,Yu Li,Xumeng Zhang,Yang Yang,Yan Wang,Yingfen Wei,Qi Liu..Reliable ferroelectricity down to cryogenic temperature in wakeup free Hf_(0.5)Zr_(0.5)O_(2)thin films by thermal atomic layer deposition[J].Journal of Semiconductors,2024,45(3):P.33-37,5.

基金项目

supported by the National Key R&D Program of China under Grant No.2022YFB3608400 （）

National Natural Science Foundation of China under Grant Nos.61825404,61888102,and 62104044 （）

the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No.XDB44000000 and the project of MOE innovation platform. （）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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