Reliable ferroelectricity down to cryogenic temperature in wakeup free Hf_(0.5)Zr_(0.5)O_(2)thin films by thermal atomic layer depositionOACSTPCDEI
The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics.In this work,TiN/Hf_(0.5)Zr_(0.5)O_(2)/TiN capacitors that are free from the wake-up effect are investigated systematically from room temperature(300 K)to cryogenic temperature(30 K).We observe a consistent decrease in permittivity(εr)and a progressive increase in coercive electric field(Ec)as temperatures decrease.Our investigation reveals exceptional stability in the double remnant polarization(2P_(r))of our ferroelectric thin films across a wide temperature range.Specifically,at 30 K,a 2P_(r)of 36μC/cm^(2)under an applied electric field of 3.0 MV/cm is achieved.Moreover,we observed a reduced fatigue effect at 30 K in comparison to 300 K.The stable ferroelectric properties and endurance characteristics demonstrate the feasibility of utilizing HfO_(2)based ferroelectric thin films for cryo-electronics applications.
Shuyu Wu;Rongrong Cao;Hao Jiang;Yu Li;Xumeng Zhang;Yang Yang;Yan Wang;Yingfen Wei;Qi Liu;
State Key Laboratory of Fabrication Technologies for Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China University of Chinese Academy of Sciences,Beijing 100049,ChinaCollege of Electronic Science and Technology,National University of Defense Technology,Changsha 410073,ChinaFrontier institute of Chip and System,Fudan University,Shanghai 200433,ChinaState Key Laboratory of Fabrication Technologies for Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
hafnia-zirconia solid solutionferroelectricitycryogenic temperaturewake-up effect
《Journal of Semiconductors》 2024 (003)
P.33-37 / 5
supported by the National Key R&D Program of China under Grant No.2022YFB3608400;National Natural Science Foundation of China under Grant Nos.61825404,61888102,and 62104044;the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No.XDB44000000 and the project of MOE innovation platform.
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