Reliable ferroelectricity down to cryogenic temperature in wakeup free Hf_(0.5)Zr_(0.5)O_(2)thin films by thermal atomic layer depositionOACSTPCDEI
The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics.In this work,TiN/Hf_(0.5)Zr_(0.5)O_(2)/TiN capacitors that are free fro…查看全部>>
Shuyu Wu;Rongrong Cao;Hao Jiang;Yu Li;Xumeng Zhang;Yang Yang;Yan Wang;Yingfen Wei;Qi Liu
State Key Laboratory of Fabrication Technologies for Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China University of Chinese Academy of Sciences,Beijing 100049,ChinaCollege of Electronic Science and Technology,National University of Defense Technology,Changsha 410073,ChinaFrontier institute of Chip and System,Fudan University,Shanghai 200433,ChinaFrontier institute of Chip and System,Fudan University,Shanghai 200433,ChinaFrontier institute of Chip and System,Fudan University,Shanghai 200433,ChinaState Key Laboratory of Fabrication Technologies for Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,ChinaState Key Laboratory of Fabrication Technologies for Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,ChinaFrontier institute of Chip and System,Fudan University,Shanghai 200433,ChinaFrontier institute of Chip and System,Fudan University,Shanghai 200433,China
hafnia-zirconia solid solutionferroelectricitycryogenic temperaturewake-up effect
《Journal of Semiconductors》 2024 (3)
P.33-37,5
supported by the National Key R&D Program of China under Grant No.2022YFB3608400National Natural Science Foundation of China under Grant Nos.61825404,61888102,and 62104044the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No.XDB44000000 and the project of MOE innovation platform.
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