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Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

NicolòZagni Manuel Fregolent Andrea Del Fiol Davide Favero Francesco Bergamin Giovanni Verzellesi Carlo De Santi Gaudenzio Meneghesso Enrico Zanoni Christian Huber Matteo Meneghini Paolo Pavan

Journal of Semiconductors2024，Vol.45Issue(3)：P.45-52,8.

Journal of Semiconductors2024，Vol.45Issue(3)：P.45-52,8.DOI:10.1088/1674-4926/45/3/032501

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

NicolòZagni ¹Manuel Fregolent ²Andrea Del Fiol ²Davide Favero ²Francesco Bergamin ²Giovanni Verzellesi ³Carlo De Santi ²Gaudenzio Meneghesso ²Enrico Zanoni ²Christian Huber ⁴Matteo Meneghini ²Paolo Pavan¹

作者信息

1. Department of Engineering“Enzo Ferrari”,University of Modena and Reggio Emilia,Modena 41125,Italy
2. Department of Information Engineering,University of Padova,Padova 35131,Italy
3. Department of Sciences and Methods for Engineering(DISMI),University of Modena and Reggio Emilia,Reggio Emilia 42122,Italy EN&TECH Center,University of Modena and Reggio Emilia,Reggio Emilia 42122,Italy
4. Advanced Technologies and Micro Systems Department,Robert Bosch GmbH,Renningen 71272,Germany
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摘要

关键词

vertical GaN trench MOSFET/SiO_(2)/interface traps/border traps/hysteresis/BTI

分类

信息技术与安全科学

引用本文复制引用

NicolòZagni,Manuel Fregolent,Andrea Del Fiol,Davide Favero,Francesco Bergamin,Giovanni Verzellesi,Carlo De Santi,Gaudenzio Meneghesso,Enrico Zanoni,Christian Huber,Matteo Meneghini,Paolo Pavan..Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD[J].Journal of Semiconductors,2024,45(3):P.45-52,8.

基金项目

funding from the Electronic Component Systems for European Leadership Joint Undertaking(ECSEL JU),under grant agreement No.101007229. （ECSEL JU）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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