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2D black arsenic phosphorous

Junchuan Liang Yi Hu Liming Ding Zhong Jin

Journal of Semiconductors2024，Vol.45Issue(3)：P.1-3,3.

Journal of Semiconductors2024，Vol.45Issue(3)：P.1-3,3.DOI:10.1088/1674-4926/45/3/030201

2D black arsenic phosphorous

Junchuan Liang ¹Yi Hu ¹Liming Ding ²Zhong Jin¹

作者信息

1. Key Laboratory of Mesoscopic Chemistry(MoE),School of Chemistry and Chemical Engineering,Nanjing University,Nanjing 210023,China
2. Center for Excellence in Nanoscience(CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS),National Center for Nanoscience and Technology,Beijing 100190,China
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摘要

关键词

materials/graphene/bismuth

分类

通用工业技术

引用本文复制引用

Junchuan Liang,Yi Hu,Liming Ding,Zhong Jin..2D black arsenic phosphorous[J].Journal of Semiconductors,2024,45(3):P.1-3,3.

基金项目

the National Natural Science Foundation of China(22022505 and 21872069) （22022505 and 21872069）

the Fundamental Research Funds for the Central Universities of China(020514380266,020514380272,and 020514380274) （020514380266,020514380272,and 020514380274）

the Scientific and Technological Innovation Special Fund for Carbon Peak and Carbon Neutrality of Jiangsu Province(BK20220008) （BK20220008）

the Scientific and Technological Achievements Transformation Special Fund of Jiangsu Province(BA2023037) （BA2023037）

the International Collaboration Research Program of Nanjing City(202201007 and 2022SX00000955) （202201007 and 2022SX00000955）

the Gusu Leading Talent Program of Scientific and Technological Innovation and Entrepreneurship of Wujiang District in Suzhou City(ZXL2021273) （ZXL2021273）

the National Key Research and Development Program of China(2022YFB3803300,2023YFE0116800) （2022YFB3803300,2023YFE0116800）

Beijing Natural Science Foundation(IS23037). （IS23037）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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