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Development of in situ characterization techniques in molecular beam epitaxy

Chao Shen Wenkang Zhan Manyang Li Zhenyu Sun Jian Tang Zhaofeng Wu Chi Xu Bo Xu Chao Zhao Zhanguo Wang

Journal of Semiconductors2024，Vol.45Issue(3)：P.9-32,24.

Journal of Semiconductors2024，Vol.45Issue(3)：P.9-32,24.DOI:10.1088/1674-4926/45/3/031301

Development of in situ characterization techniques in molecular beam epitaxy

Chao Shen ¹Wenkang Zhan ²Manyang Li ²Zhenyu Sun ²Jian Tang ³Zhaofeng Wu ⁴Chi Xu ⁵Bo Xu ²Chao Zhao ²Zhanguo Wang²

作者信息

1. Laboratory of Solid State Optoelectronics Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China School of Physics Science and Technology,Xinjiang University,Urumqi 830046,China
2. Laboratory of Solid State Optoelectronics Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101804,China
3. School of New Energy and Electronics,Yancheng Teachers University,Yancheng 224002,China
4. School of Physics Science and Technology,Xinjiang University,Urumqi 830046,China
5. Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
折叠

摘要

关键词

epitaxial growth/thin film/in situ characterization/molecular beam epitaxy(MBE)

分类

信息技术与安全科学

引用本文复制引用

Chao Shen,Wenkang Zhan,Manyang Li,Zhenyu Sun,Jian Tang,Zhaofeng Wu,Chi Xu,Bo Xu,Chao Zhao,Zhanguo Wang..Development of in situ characterization techniques in molecular beam epitaxy[J].Journal of Semiconductors,2024,45(3):P.9-32,24.

基金项目

supported by the National Key R&D Program of China(Grant No.2021YFB2206503) （Grant No.2021YFB2206503）

National Natural Science Foundation of China(Grant No.62274159) （Grant No.62274159）

CAS Project for Young Scientists in Basic Research(Grant No.YSBR-056) （Grant No.YSBR-056）

the“Strategic Priority Research Program”of the Chinese Academy of Sciences(Grant No.XDB43010102). （Grant No.XDB43010102）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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