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Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Jin Sui Jiaxiang Chen Haolan Qu Yu Zhang Xing Lu Xinbo Zou

Journal of Semiconductors2024，Vol.45Issue(3)：P.58-63,6.

Journal of Semiconductors2024，Vol.45Issue(3)：P.58-63,6.DOI:10.1088/1674-4926/45/3/032503

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Jin Sui ¹Jiaxiang Chen ¹Haolan Qu ¹Yu Zhang ¹Xing Lu ²Xinbo Zou³

作者信息

1. School of Information Science and Technology,ShanghaiTech University,Shanghai 201210,China Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China
2. School of Electronics and Information Technology,Sun Yat-sen University,Guangzhou 510275,China
3. School of Information Science and Technology,ShanghaiTech University,Shanghai 201210,China
折叠

摘要

关键词

GaN/deep level transient spectroscopy/minority carrier trap/time constant/trap concentration

分类

信息技术与安全科学

引用本文复制引用

Jin Sui,Jiaxiang Chen,Haolan Qu,Yu Zhang,Xing Lu,Xinbo Zou..Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy[J].Journal of Semiconductors,2024,45(3):P.58-63,6.

基金项目

supported by ShanghaiTech University Startup Fund 2017F0203-000-14 （）

the National Natural Science Foundation of China(Grant No.52131303) （Grant No.52131303）

Natural Science Foundation of Shanghai(Grant No.22ZR1442300) （Grant No.22ZR1442300）

in part by CAS Strategic Science and Technology Program(Grant No.XDA18000000). （Grant No.XDA18000000）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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