Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopyOACSTPCDEI
Emission and capture characteristics of a deep hole trap(H1)in n-GaN Schottky barrier diodes(SBDs)have been investigated by optical deep level transient spectroscopy(ODLTS).Activation energy(Eemi)and capture cross-section(σ_(p))of H1 are determined to be 0.75 eV and 4.67×10^(−15)cm^(2),respectively.Distribution of apparent trap concentration in space charge region is demonstrated.Temperature-enhanced emission process is revealed by decrease of emission time constant.Electricfield-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission(PFE)model.In addition,H1 shows point defect capture properties and temperature-enhanced capture kinetics.Taking both hole capture and emission processes into account during laser beam incidence,H1 features a trap concentration of 2.67×10^(15)cm^(−3).The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.
Jin Sui;Jiaxiang Chen;Haolan Qu;Yu Zhang;Xing Lu;Xinbo Zou;
School of Information Science and Technology,ShanghaiTech University,Shanghai 201210,China Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,ChinaSchool of Electronics and Information Technology,Sun Yat-sen University,Guangzhou 510275,ChinaSchool of Information Science and Technology,ShanghaiTech University,Shanghai 201210,China
电子信息工程
GaNdeep level transient spectroscopyminority carrier traptime constanttrap concentration
《Journal of Semiconductors》 2024 (003)
P.58-63 / 6
supported by ShanghaiTech University Startup Fund 2017F0203-000-14;the National Natural Science Foundation of China(Grant No.52131303);Natural Science Foundation of Shanghai(Grant No.22ZR1442300);in part by CAS Strategic Science and Technology Program(Grant No.XDA18000000).
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