湖南大学学报（自然科学版）2024，Vol.51Issue(2)：104-110,7.DOI:10.16339/j.cnki.hdxbzkb.2024230
基于SiGe BiCMOS的全集成射频功率放大器设计
Design of Fully Integrated RF Power Amplifier Based on SiGe BiCMOS
摘要
Abstract
A compact fully integrated power amplifier for mobile devices based on the SiGe BiCMOS process is proposed.The design uses a cascode driver stage cascaded with a common emitter power stage to increase the power gain of the amplifier,integrates a CMOS power supply on-chip to provide bias current,and uses distributed ballast resistors and a bias circuit with thermal negative feedback effect to compensate the junction temperature so as to prevent amplifier failure at high-temperature operation.A compact circuit-level thermal coupling model is used to simulate and verify the proposed thermal stabilization measures.The post-simulation results show that PA has an output gain of 32.5 dB in the working range of 2.4～2.5 GHz under a 3.3 V power supply,S11&S22<-10 dB,and the output power at the 1 dB compression point is 25.4 dBm.The maximum junction temperature is less than 65℃(saturation).The chip area is only 1.25×0.76 mm2.The test results show that in the working environment of-45～85℃,the amplifier can work well in the application where the gain requirement is 26.5～32.9 dB.The output power at the 1 dB compression point is 24.3 dBm.Using a 20 MHz 64-QAM OFDM modulation signal test,the output power of DEVM reaching-30 dB is 18.1 dBm.关键词
功率放大器/异质结双极晶体管/锗硅工艺Key words
power amplifiers/heterojunction bipolar transistors/SiGe technology分类
信息技术与安全科学引用本文复制引用
傅海鹏,项德才..基于SiGe BiCMOS的全集成射频功率放大器设计[J].湖南大学学报（自然科学版）,2024,51(2):104-110,7.基金项目
国家自然科学基金资助项目(62074110),National Natural Science Foundation of China(62074110) （62074110）
国家重点研发计划基金资助项目(2018YFB2202500),National Key Research and Development Program of China(2018YFB2202500) （2018YFB2202500）
