低压Si MOSFETs对SiC/Si级联器件短路特性的影响OA北大核心CSTPCD
Effect of Low-Voltage Si MOSFETs on Short-Circuit Characteristics of SiC/Si Cascode Devices
由低压硅金属-氧化物-半导体场效应晶体管(Silicon Metal-Oxide-Semiconductor Field-Effect Transistor,Si MOSFET)和碳化硅结型场效应晶体管(Silicon Carbon Junction Field-Effect Transistor,SiC JFET)构成的 SiC/Si级联(Cascode)器件,兼具了低压Si MOSFET易于驱动、SiC JFET高耐压低损耗等优点.该文采用实…查看全部>>
SiC/Si cascode device,formed by low-voltage Silicon Metal-Oxide-Semiconductor Field-Effect Transistor(Si MOSFET)and Silicon Carbon Junction Field-Effect Transistor(SiC JFET),has several advantages such as low driving-voltage of Si MOSFET,high blocking-voltage,and low loss of SiC JFET.In this paper,the effect of low-voltage Si MOSFET on the short-circuit performance of SiC/Si cascode device has been investigated with experiment and numerical simulation.The re…查看全部>>
周郁明;楚金坤;周伽慧
安徽工业大学安徽省高校电力电子与运动控制重点实验室,马鞍山 243002安徽工业大学安徽省高校电力电子与运动控制重点实验室,马鞍山 243002安徽工业大学安徽省高校电力电子与运动控制重点实验室,马鞍山 243002
电子信息工程
泄漏电流SiC/Si级联器件SiC JFET短路失效
leakage currentSiC/Si cascode deviceSiC JFETshort-circuit failure
《电子科技大学学报》 2024 (2)
174-179,6
安徽省自然科学基金(2008085ME157)安徽高校自然科学研究项目(KJ2020A0247)
评论