电子科技大学学报2024，Vol.53Issue(2)：174-179,6.DOI:10.12178/1001-0548.2023050
低压Si MOSFETs对SiC/Si级联器件短路特性的影响
Effect of Low-Voltage Si MOSFETs on Short-Circuit Characteristics of SiC/Si Cascode Devices
摘要
Abstract
SiC/Si cascode device,formed by low-voltage Silicon Metal-Oxide-Semiconductor Field-Effect Transistor(Si MOSFET)and Silicon Carbon Junction Field-Effect Transistor(SiC JFET),has several advantages such as low driving-voltage of Si MOSFET,high blocking-voltage,and low loss of SiC JFET.In this paper,the effect of low-voltage Si MOSFET on the short-circuit performance of SiC/Si cascode device has been investigated with experiment and numerical simulation.The results give that during the short circuit,the highest temperature of SiC JFET in the cascode case is lower than that of single SiC JFET case,so the short-circuit failure duration of SiC/Si cascode device is longer than that of single SiC JFET.Moreover,with the increasing in the rated voltage of Si MOSFET,the short-circuit failure duration for SiC/Si cascode device also increases.关键词
泄漏电流/SiC/Si级联器件/SiC JFET/短路失效Key words
leakage current/SiC/Si cascode device/SiC JFET/short-circuit failure分类
信息技术与安全科学引用本文复制引用
周郁明,楚金坤,周伽慧..低压Si MOSFETs对SiC/Si级联器件短路特性的影响[J].电子科技大学学报,2024,53(2):174-179,6.基金项目
安徽省自然科学基金(2008085ME157) （2008085ME157）
安徽高校自然科学研究项目(KJ2020A0247) （KJ2020A0247）
