自成形硅表面微结构:表面特征及潜在应用OA北大核心CSTPCD
A Self-Formed Silicon Surface Microstructure:Surface Characterization and Potential Applications
采用等离子体增强化学气相沉积法(Plasma Enhanced Chemical Vapor Deposition,PECVD)制备掺氢非晶硅膜,并对其表面结构学进行研究.该文发现在晶体硅衬底上沉积非晶硅薄膜时,会在表面形成非均匀分布的起泡缺陷.在已制备的非晶硅薄膜上进一步沉积了氮化硅/非晶硅的交替层,在起泡缺陷原位形成了一个完美的穹顶多壳的微结构,并且没有明显的结构坍塌.该文总结了自成形穹顶微结构的 3个独特的结构特性,并进一步指出了该自成形穹顶微结构在纳米光学和微机电系统中的潜在应用.
The morphology of hydrogenated amorphous silicon(a-Si:H)films grown by plasma enhanced chemical vapor deposition(PECVD)is studied.Nonuniformly distributed bubble defects are formed during the process of a-Si:H films deposited on crystalline silicon substrate.The SiNx/a-Si alternative layers are deposited on the as-prepared a-Si:H film,a perfect dome-shaped multi-shell microstructure was formed at the site of the blister defect,and no distinct structural collapse was observed.Three unique characters of the self-formed dome-shape microstructure are concluded,and the potential applications of the proposed self-formed dome-shape microstructure in nanophotonics and MEMS are also pointed out.
李佳城;刘爽;伍胜兰;刘永;钟智勇
电子科技大学光电科学与工程学院,成都 611731电子科技大学电子科学与工程学院,成都 611731
微机电系统非晶硅起泡缺陷自成形硅微/纳结构
MEMSamorphous silicon filmsblister defectself-formedsilicon micro/nanostructures
《电子科技大学学报》 2024 (002)
180-184 / 5
National Natural Science Foundation of China(61734002,61435010,61177035,61421002)国家自然科学基金(61734002,61435010,61177035,61421002)
评论