电器与能效管理技术Issue(2)：39-43,5.DOI:10.16628/j.cnki.2095-8188.2024.02.007
基于GaN器件的单相逆变器TCM控制策略研究
Research on TCM Control Strategy of Single-Phase Inverter Based on GaN
陈钰 1周宝鼎2
作者信息
- 1. 武汉羿变电气有限公司,湖北武汉 430070
- 2. 中国人民解放军91184部队,山东青岛 266071
- 折叠
摘要
Abstract
Gallium nitride(GaN)high electron mobility transistor(HEMT)has the advantages of fast switching speed and low device loss,and is widely used in high frequency applications.In order to further improve the efficiency and power density of the converter,the triangle current mode(TCM)modulation is applied to the single-phase inverter based on GaN device.The full range zero voltage switching(ZVS)is realized by controlling the negative current and dead time,so as to improve the efficiency and power density of the converter.A prototype is built for verification.The experimental results show that TCM modulation can achieve soft switching under different load conditions.The maximum switching frequency can reach 300 kHz,and the peak efficiency can reach 98.5％.关键词
氮化镓/高电子迁移率晶体管/单相逆变器/三角电流模式/零电压开关Key words
gallium nitride(GaN)/high electron mobility transistor(HEMT)/signal phase inverter/triangle current mode(TCM)/zero voltage switching(ZVS)分类
信息技术与安全科学引用本文复制引用
陈钰,周宝鼎..基于GaN器件的单相逆变器TCM控制策略研究[J].电器与能效管理技术,2024,(2):39-43,5.
