基于GaN器件的单相逆变器TCM控制策略研究OA
Research on TCM Control Strategy of Single-Phase Inverter Based on GaN
氮化镓(GaN)高电子迁移率晶体管具有开关速度快、器件损耗小的优点,在高频应用场合得到广泛应用.为了进一步提高变换器效率和功率密度,将三角电流模式(TCM)调制用于基于GaN器件的单相逆变器中,通过控制负向电流与死区时间实现了全范围零电压开关(ZVS),达到提高变换器效率和功率密度的目的.搭建了 1台样机进行验证,实验结果表明,TCM调制在不同负载条件下均可实现软开关,最大开关频率可达300 kHz,峰值效率可达98.5％.
Gallium nitride(GaN)high electron mobility transistor(HEMT)has the advantages of fast switching speed and low device loss,and is widely used in high frequency applications.In order to further improve the efficiency and power density of the converter,the triangle current mode(TCM)modulation is applied to the single-phase inverter based on GaN device.The full range zero voltage switching(ZVS)is realized by controlling the negative current and dead time,so as to improve the efficiency and power density of the converter.A prototype is built for verification.The experimental results show that TCM modulation can achieve soft switching under different load conditions.The maximum switching frequency can reach 300 kHz,and the peak efficiency can reach 98.5％.
陈钰;周宝鼎
武汉羿变电气有限公司,湖北武汉 430070中国人民解放军91184部队,山东青岛 266071
动力与电气工程
氮化镓高电子迁移率晶体管单相逆变器三角电流模式零电压开关
gallium nitride(GaN)high electron mobility transistor(HEMT)signal phase invertertriangle current mode(TCM)zero voltage switching(ZVS)
《电器与能效管理技术》 2024 (002)
39-43 / 5
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