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首页|期刊导航|红外与毫米波学报|非均匀GaAs/AlGaAs量子阱红外探测器材料表征和器件性能研究

非均匀GaAs/AlGaAs量子阱红外探测器材料表征和器件性能研究

苏家平 周孝好 唐舟 范柳燕 夏顺吉 陈平平 陈泽中

红外与毫米波学报2024,Vol.43Issue(1):7-14,8.
红外与毫米波学报2024,Vol.43Issue(1):7-14,8.DOI:10.11972/j.issn.1001-9014.2024.01.002

非均匀GaAs/AlGaAs量子阱红外探测器材料表征和器件性能研究

Study on material characterization and device performance of non-uniform GaAs/AlGaAs quantum well infrared detectors

苏家平 1周孝好 2唐舟 2范柳燕 2夏顺吉 2陈平平 2陈泽中3

作者信息

  • 1. 上海理工大学 材料与化学学院,上海 200093||中国科学院上海技术物理研究所 红外物理国家重点实验室,上海 200083
  • 2. 中国科学院上海技术物理研究所 红外物理国家重点实验室,上海 200083
  • 3. 上海理工大学 材料与化学学院,上海 200093
  • 折叠

摘要

Abstract

In this paper,the GaAs/AlGaAs non-uniform quantum well infrared detector material was successfully grown by molecular beam epitaxy(MBE),and the microstructure was characterized in detail.The performance differ-ence between the non-uniform quantum well structure and the conventional quantum well infrared detector is analyzed and compared,and the performance change of the non-uniform quantum well infrared detector under different well widths is comparatively studied.The microstructure of non-uniform quantum well infrared detector materials was ana-lyzed by high resolution transmission electron microscopy(HRTEM)combined with energy dispersive spectroscopy(EDS),and the non-uniform well doping was characterized by secondary ion mass spectrometry(SIMS).The results show that the crystal quality of the non-uniform quantum well epitaxial material is very good,and the non-uniform quan-tum well structure and doping concentration are also in good agreement with the design values.The results show that for non-uniform quantum well infrared detectors,the electric field distribution of the quantum well can be modulated by changing the doping concentration and barrier width of each well,and the dark current significantly decreases(by about an order of magnitude),compared with traditional uniform quantum well infrared detectors.Moreover,under different well widths,the transition modes of non-uniform quantum wells can change,and the devices with bound state to quasi-bound state transition modes(B-QB)have better blackbody response and lower dark current.

关键词

非均匀/量子阱/高分辨电镜/二次离子质谱/暗电流

Key words

quantum well infrared photodetector/high resolution transmission electron microscope/secondary ion mass spectroscopy/dark current

分类

信息技术与安全科学

引用本文复制引用

苏家平,周孝好,唐舟,范柳燕,夏顺吉,陈平平,陈泽中..非均匀GaAs/AlGaAs量子阱红外探测器材料表征和器件性能研究[J].红外与毫米波学报,2024,43(1):7-14,8.

基金项目

国家自然科学基金(12027805,61991444,11991060)Supported by the National Natural Science Foundation of China(12027805,61991444,11991060). (12027805,61991444,11991060)

红外与毫米波学报

OA北大核心CSTPCD

1001-9014

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