红外与毫米波学报2024，Vol.43Issue(1)：15-22,8.DOI:10.11972/j.issn.1001-9014.2024.01.003
InAs/GaSb Ⅱ类超晶格材料的Si离子注入研究
Si ion implantation study of InAs/GaSb type Ⅱ superlattice materials
摘要
Abstract
Class Ⅱ superlattice infrared detectors generally detect infrared radiation through mesa junction,while trans-verse PN junction is realized through ion implantation.On the one hand,the material epitaxy process is simple,and at the same time,the advantages of superlattice material that the transverse diffusion length is far higher than the longitudi-nal can be used to improve the transport of photogenerated current carriers,and it is easy to make high-density planar ar-rays.In this paper,the effects of Si ion implantation with different energies and annealing on the properties of InAs/GaSb type Ⅱ superlattice materials were studied by using a variety of material characterization techniques.Through Si ion implantation,the epitaxial material changes from P type to N type,and the vertical tensile strain is generated in the superlattice material.The lattice constant becomes larger,and the mismatch increases with the increase of implantation energy.The mismatch before implantation is-0.012%.When the implantation energy reaches 200 keV,the mismatch reaches 0.072%,and the superlattice partially relaxes,with the relaxation degree of 14%.After annealing at 300 ° C for 60 s,the superlattice returns to the fully strained state,and the lattice constant becomes smaller,This tensile strain is caused by the diffusion of Ga-In caused by annealing and lattice shrinkage caused by Si substitution.关键词
InAs/GaSb Ⅱ类超晶格/离子注入/平面结/退火/HRXRDKey words
InAs/GaSb Type Ⅱ superlattice/ion implantation/planar junction/annealing/HRXRD分类
数理科学引用本文复制引用
何苗,陈建新,周易,应翔霄,梁钊铭,黄敏,王志芳,朱艺红,廖科才,王楠..InAs/GaSb Ⅱ类超晶格材料的Si离子注入研究[J].红外与毫米波学报,2024,43(1):15-22,8.基金项目
国家自然科学基金(61904183,61974152,62004205,62104236,62104237,62222412)、国家重点研发计划(2022YFB3606800)、上海市启明星培育项目扬帆专项(21YF1455000、22YF1455800)、中国科学院上海技术物理研究所创新专项基金(CX-399、CX-455)Project supported by National Natural Science Foundation of China(NSFC)(61904183,61974152,62004205,62104236,62104237,62222412),National Key Research and Development Program of China(2022YFB3606800),Shanghai Rising-Star Program(Sailing Pro-gram 21YF1455000、22YF1455800)and Special Fund for Innovation of SITP,CAS(CX-399,CX-455) （61904183,61974152,62004205,62104236,62104237,62222412）
