红外与毫米波学报2024，Vol.43Issue(1)：23-28,6.DOI:10.11972/j.issn.1001-9014.2024.01.004
通过成结模拟器研究n+-n--p碲镉汞高温探测器
Study on HgCdTe detectors with high operating temperature by junction formation simulator
摘要
Abstract
An important branch of the three-generation infrared focal plane is high operating temperature(HOT)infra-red detector.For HgCdTe n-on-p detectors,dark current can be suppressed with n+-n--p structure and good passivation,and then better performance of the detector will be obtained under high operating temperature.Based on the junction for-mation simulator,the junction formation parameters of HOT device are achieved and combined with the manufacture technology of optimized passivation layer,HgCdTe n-on-p infrared focal plane arrays which can operate at higher tem-perature was made in Shanghai Institute of Technical Physics(SITP).The performance of HgCdTe n-on-p infrared focal plane arrays was studied at high operating temperature.One of mid-infrared detector has reached good performance un-der different operating temperature.The NETD is 6.10mK and operability is 99.96%at 80K,and the NETD is 11.0mK and operability is 99.50%at 150K,which reached the theoretical limit.关键词
碲镉汞/n+-n--p/高工作温度/红外焦平面Key words
HgCdTe/n+-n--p/high operation temperature(HOT)/infrared focal plane array分类
信息技术与安全科学引用本文复制引用
林加木,周松敏,王溪,甘志凯,林春,丁瑞军..通过成结模拟器研究n+-n--p碲镉汞高温探测器[J].红外与毫米波学报,2024,43(1):23-28,6.基金项目
中国科学院青年创新促进会(2017288) （2017288）
