红外与毫米波学报2024，Vol.43Issue(1)：29-35,7.DOI:10.11972/j.issn.1001-9014.2024.01.005
不同生长条件对CdTe/GaAs外延薄膜表面形貌和光学性质的影响
Effect of different growth conditions on surface morphology and optical properties of CdTe/GaAs epitaxial films
摘要
Abstract
CdTe(211)thin films are grown on GaAs(211)B substrates by molecular beam epitaxy(MBE),the influence of different process conditions on the surface morphology and optical properties of the CdTe epitaxial films are stemati-cally studied.The study shows that under certain growth temperatures,growing CdTe thin films in a Te atmosphere and increasing the CdTe and Te beam ratio can significantly reduce the size and density of pyramid defects on the CdTe sur-face.When the CdTe and Te beam ratio is 6.5,the pyramid defects almost disappear,and the surface smoothness of the material is significantly improved.X-ray diffraction(XRD)also shows that the crystal quality of CdTe has significantly improved.Further Raman spectroscopy shows that with the increase of the CdTe and Te beam ratio,the A1 peak of Te weakens,and the intensity ratio of the CdTe LO and TO phonon peaks increases.Low-temperature photoluminescence(PL)studies also show that with the increase of the CdTe and Te beam ratio,the reduction of Cd vacancies can reduce the peak intensity of the deep energy level region related to impurity energy levels,while the half-width of the free exci-ton peak related to crystal quality reduces,and the optical quality of the material is significantly improved.This study explores the ideal process window and related mechanisms of CdTe/GaAs epitaxial materials,and provides a foundation for further epitaxial high-quality HgCdTe materials using this as a buffer layer.关键词
CdTe/分子束外延/表面缺陷/拉曼光谱/荧光光谱Key words
CdTe/molecular beam epitaxy/surface defects/Raman spectroscopy/fluorescence spectroscopy分类
数理科学引用本文复制引用
朱辰玮,刘欣扬,巫艳,左鑫荣,范柳燕,陈平平,秦晓梅..不同生长条件对CdTe/GaAs外延薄膜表面形貌和光学性质的影响[J].红外与毫米波学报,2024,43(1):29-35,7.基金项目
国家自然科学基金(12027805,11991062) （12027805,11991062）
