红外与毫米波学报2024，Vol.43Issue(1)：36-43,8.DOI:10.11972/j.issn.1001-9014.2024.01.006
10µm 1280×1024 HgCdTe中波红外焦平面阵列探测性能提升
Improved detection performance of 1280×1024 middle-wavelength infrared HgCdTe focal plane arrays with 10 µm pixel pitch
谭必松 1周永强 1余波 1王舒 1毛剑宏 1陈殊璇 1李伟伟 1陈世锐 1陈天晴 1杜宇 1彭成盼 1熊雄1
作者信息
- 1. 浙江珏芯微电子有限公司,浙江 丽水 323000
- 折叠
摘要
Abstract
In this paper,an investigation into the preparation technology and performance of 1280×1024 middle-wavelength(MW)HgCdTe infrared focal plane arrays(IRFPAs)with a pixel size of 10µm was introduced.The manufacturing process of these high-resolution FPAs involved the utilization of B+ injection to establish small-sized n-on-p junctions and the application of high-precision In-bump interconnection.Through development of the process,the adverse effects of the mismatch between HgCdTe devices and readout integrated circuits(ROICs)were mitigated,thereby reducing the likelihood of device failure.The assembled FPAs were evaluated to photo-electric performance evaluation at a temperature of 85 K.The experimental results demonstrate that the detector's spectral response encompasses a wavelength range of 3.67 µm to 4.88 µm.The highest pixel operability of the assembly can reach 99.95%.The average values of the noise equivalent temperature difference(NETD)and the dark current density for all the pixels of the assembly are respectively less than 16 mK and 2.1×10-8 A/cm2.In comparison with a 15 µm pitch detector,the utilization of the 1280×1024 10 µm MWIR detector facilitated the capture of finer details in target images and extended the identification range.At present,this technology has been successfully transferred to the HgCdTe FPA production line of Zhejiang Juexin Microelectronics Co.Ltd.(ZJM).The production capacity and yield are constantly increasing.关键词
红外探测器/碲镉汞/1K×1K红外焦平面阵列/n-on-pKey words
infrared detector/HgCdTe/1 K×1 K FPA/n-on-p分类
信息技术与安全科学引用本文复制引用
谭必松,周永强,余波,王舒,毛剑宏,陈殊璇,李伟伟,陈世锐,陈天晴,杜宇,彭成盼,熊雄..10µm 1280×1024 HgCdTe中波红外焦平面阵列探测性能提升[J].红外与毫米波学报,2024,43(1):36-43,8.
