红外与毫米波学报2024，Vol.43Issue(1)：44-51,8.DOI:10.11972/j.issn.1001-9014.2024.01.007
γ辐照对InGaAsP/InP单光子雪崩探测器性能的影响
Effects of Gamma irradiation on performance of InGaAsP/InP single-photon avalanche diodes
摘要
Abstract
InGaAsP/InP single-photon avalanche diodes(SPADs)were gamma-irradiated with total doses of 10 krad(Si)and 20 krad(Si)and tested in situ and shift methods.After irradiation,the dark currents and dark count rates were degraded slightly,whereas the photon detection efficiency and the after pulse probability were basically unchanged.After a certain period of annealing at room temperature,these degradations were essentially recov-ered,indicating that transient ionization damage dominated in the gamma irradiation of InGaAsP/InP single-pho-ton avalanche diodes.关键词
γ辐照/InGaAsP/InP/单光子雪崩探测器/单光子性能Key words
Gamma irradiation/InGaAsP/InP/single-photon avalanche diode/single-photon performance分类
信息技术与安全科学引用本文复制引用
孙京华,王文娟,诸毅诚,郭子路,祁雨菲,徐卫明..γ辐照对InGaAsP/InP单光子雪崩探测器性能的影响[J].红外与毫米波学报,2024,43(1):44-51,8.基金项目
Supported by the National Natural Science Foundation of China(NSFC)(62174166,11991063,U2241219),Shanghai Municipal Sci-ence and Technology Major Project(2019SHZDZX01,22JC1402902),and the Strategic Priority Research Program of Chinese Academy of Sciences(XDB43010200). （NSFC）
