红外与毫米波学报2024，Vol.43Issue(1)：63-69,7.DOI:10.11972/j.issn.1001-9014.2024.01.009
MBE脱氧条件与InGaAs/InP APD性能的相关性
Correlation between MBE deoxidation conditions and InGaAs/InP APD performance
摘要
Abstract
InP-based InGaAs/InP avalanche photodiodes(APDs)have high sensitivity to near-infrared light,making them ideal optoelectronic devices for weak signal and single-photon detection.However,as device struc-tures become complex and advanced,with thickness and sizes ranging from quantum dots to several micrometers,performance is increasingly constrained by defects in the lattice of the material and the process conditions.Solid source molecular beam epitaxy(MBE)technology was used to deoxidize InP substrates under the atmosphere As and P,respectively,and epitaxially grow lattice-matched In0.53Ga0.47As film and InGaAs/InP avalanche APD full-structure materials.The experiment results demonstrate that As deoxidation has a distinct advantage over P deoxy-genation in terms of MBE material quality,which can make a straight and sharp heterojunction interface,lower carrier concentrations,higher Hall mobilities,longer minority carrier lifetimes,and achieve suppression of dark current caused by point defects or impurity defects in the device.Therefore,As deoxidation can be applied effec-tively to enhance the quality of MBE materials.This work optimizes InP substrate InGaAs/InP epitaxial growth parameters and device fabrication conditions.关键词
分子束外延/P/As切换/异质界面扩散/InGaAs/InP雪崩光电二极管Key words
molecular beam epitaxy/P/As exchange/heterointerface diffusion/InGaAs/InP APD分类
数理科学引用本文复制引用
郭子路,陆卫,王文娟,曲会丹,范柳燕,诸毅诚,王亚杰,郑长林,王兴军,陈平平..MBE脱氧条件与InGaAs/InP APD性能的相关性[J].红外与毫米波学报,2024,43(1):63-69,7.基金项目
Supported by the National Natural Science Foundation of China(12027805,62171136,62174166,U2241219) （12027805,62171136,62174166,U2241219）
the Science and Tech-nology Commission of Shanghai Municipality(2019SHZDZX01,22JC1402902)and the Strategic Priority Research Program of the Chinese Academy of Sci-ences(XDB43010200). （2019SHZDZX01,22JC1402902）
