红外与毫米波学报2024，Vol.43Issue(1)：85-90,6.DOI:10.11972/j.issn.1001-9014.2024.01.012
一种改进的基于110 GHz在片S参数测试的HEMT器件寄生电阻提取方法
An improved method for determination of extrinsic resistances for HEMT devices based on 110 GHz S-parameters on-wafer measurement
摘要
Abstract
An improved method for determination of extrinsic resistances for 70 nm InP high electron mobility transistor(HEMT)is proposed in this paper.A set of expressions have been derived from the equivalent circuit model under operating bias points(Vgs＞Vth,Vds = 0 V).The extrinsic resistances are iterative determined using the discrepancy between simulated and measured S-parameters as an optimization criterion using the semi-analyti-cal method.Good agreement between simulated and measured S-parameters under multi bias over the frequency range up to 110 GHz verifies the effectiveness of this extraction method.关键词
InP高电子迁移率晶体管/等效电路模型/寄生电阻/器件建模Key words
InP high electron mobility transistor(HEMT)/equivalent circuit model/extrinsic resistances/modeling分类
信息技术与安全科学引用本文复制引用
李织纯,吕渊婷,张傲,高建军..一种改进的基于110 GHz在片S参数测试的HEMT器件寄生电阻提取方法[J].红外与毫米波学报,2024,43(1):85-90,6.基金项目
Supported by the National Natural Science Foundation of China(62201293,62034003) （62201293,62034003）
