电气技术2024，Vol.25Issue(3)：1-10,10.
基于Bo-BiLSTM网络的IGBT老化失效预测方法
IGBT aging failure prediction method based on Bo-BiLSTM network
摘要
Abstract
Aiming at the low accuracy of aging failure prediction for insulated gate bipolar transistor(IGBT)after thermal stress impact,a bi-directional long short term memory(BiLSTM)network based on Bayesian optimization(Bo)is proposed to predict the aging failure of IGBTs.Firstly,the aging failure principle of IGBT module is analyzed,the failure characteristic database is established based on NASA aging experiment data set,and finally the Bo-BiLSTM network is constructed to predict the failure characteristic parameters by using Matlab software.Commonly used regression prediction performance evaluation indexes are selected to compare and analyze the prediction results of long short term memory(LSTM)network model,BiLSTM network model and Bo-BiLSTM network model.The results show that the model fitting accuracy of Bo-BiLSTM network is higher,so the IGBT aging failure prediction method based on Bo-BiLSTM network has better prediction effect and can be applied to IGBT failure prediction.关键词
绝缘栅双极型晶体管(IGBT)/贝叶斯优化/双向长短期记忆(BiLSTM)网络/老化失效预测Key words
insulated gate bipolar transistor(IGBT)/Bayesian optimization/bi-directional long short term memory(BiLSTM)network/aging failure prediction引用本文复制引用
万庆祝,于佳松,佟庆彬,闵现娟..基于Bo-BiLSTM网络的IGBT老化失效预测方法[J].电气技术,2024,25(3):1-10,10.基金项目
北京市教育委员会基金项目(110052972027/067)北京市自然科学基金项目(21C30037) （110052972027/067）
