华中科技大学学报（自然科学版）2024，Vol.52Issue(3)：20-27,8.DOI:10.13245/j.hust.239288
1Kb自旋转移矩磁随机存储器电路设计
Design of 1Kb spin transfer torque-magnetic random access memory
摘要
Abstract
Verilog-A hardware description language was adopted to model the magnetic tunnel junction(MTJ)device which is the basic storage unit of spin transfer torque magnetic random access memory(STT-MRAM).Cadence software was adopted to verify this model.The read-write circuit of STT-MRAM was designed based on the established model.Aiming at the problem of excessive write delay,the traditional write circuit was improved.The switching delay time of MTJ reversal process was effectively shortened and the working speed of the write drive circuit was improved by increasing the number of transistors on the write branch to increase the write current and reduce the voltage drop of transistors in the structure of basic storage unit(1T1MTJ).An improved tri-stable transmission structure was adopted in read circuit,which reduces the power consumption and improves the accuracy of reading data.Finally,the non-volatile storage of 1Kb STT-MRAM was designed and implemented.The simulation results show that the designed STT-MRAM can realize the data storage and reading and writing process.关键词
磁存储器/非易失性存储器/自旋转移矩/磁隧道结/可靠性读写电路Key words
magnetic storage/nonvolatile storage/spin transfer torque/magnetic tunnel junction/reliability read-write circuit分类
信息技术与安全科学引用本文复制引用
谭玥,杜永乾,李桂芳,刘诗斌..1Kb自旋转移矩磁随机存储器电路设计[J].华中科技大学学报（自然科学版）,2024,52(3):20-27,8.基金项目
陕西省自然科学基础研究计划资助项目(2020JQ-206) （2020JQ-206）
深圳市科技创新委员会基金知识创新基础研究(自由探索)项目(JCYJ20180306171040865) （自由探索）
国家自然科学基金资助项目(61873209,61504107,61704139). （61873209,61504107,61704139）
