太赫兹科学与电子信息学报2024，Vol.22Issue(3)：290-295,6.DOI:10.11805/TKYDA2023168
260 GHz GaN高功率三倍频器设计
Design of 260 GHz GaN frequency tripler with high output power
摘要
Abstract
A 260 GHz frequency tripler based on GaN Schottky barrier diode is proposed.Unbalanced structure is adopted with GaN SBD chip to improve the tolerable power and output power of the circuit.The height-reduced and width-reduced output waveguide structure is employed to suppress the second harmonic.The input and output filter of the frequency multiplier is designed with high and low impedance strip line structure.The test results show that the frequency multiplier achieves a maximum output power of 69.1 mW and conversion efficiency of 3.3％at 261 GHz with good harmonic suppression characteristics.关键词
三倍频器/太赫兹/肖特基二极管/非平衡式/倒装Key words
frequency triplier/terahertz/Schottky barrier diode/unbanlanced structure/flip-chip分类
信息技术与安全科学引用本文复制引用
盛百城,梁士雄,冯志红,宋旭波,顾国栋,张立森,刘帅,万悦,魏碧华,李鹏雨,郝晓林..260 GHz GaN高功率三倍频器设计[J].太赫兹科学与电子信息学报,2024,22(3):290-295,6.基金项目
国家自然科学基金资助项目(62201532) （62201532）
